A Potentiostat-Based Wide-DR Multi-Sensor Integrated Interface for Heterogeneous Chemical Sensor Applications

IF 4 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Circuits and Systems II: Express Briefs Pub Date : 2024-07-01 DOI:10.1109/TCSII.2024.3421366

Junyeong Yeom;Hyunjoong Kim;Woojae Jeong;Wootaek Cho;Taejung Kim;Souvik Bag;Yonggi Kim;Yunsik Lee;Heungjoo Shin;Jae Joon Kim

{"title":"A Potentiostat-Based Wide-DR Multi-Sensor Integrated Interface for Heterogeneous Chemical Sensor Applications","authors":"Junyeong Yeom;Hyunjoong Kim;Woojae Jeong;Wootaek Cho;Taejung Kim;Souvik Bag;Yonggi Kim;Yunsik Lee;Heungjoo Shin;Jae Joon Kim","doi":"10.1109/TCSII.2024.3421366","DOIUrl":null,"url":null,"abstract":"A potentiostat-based wide dynamic range (DR) multi-sensor integrated interface is presented for heterogeneous chemical sensor applications. For versatility across various sensor kinds, a reconfigurable frontend structure based on the potentiostat is proposed to provide wide DR performance for multiple sensor types of electrochemical, chemo-resistive, and FET-based. Each operation mode for different sensor types is designed to support adaptive calibration capabilities on baseline, offset, and sensitivity. It is also designed to support selectable digital conversion methods for optimal conversion speed and resolution, depending on application requirements. In the electrochemical mode, bi-directional operation is implemented to support various detection methods including cyclic voltammetry and chronoamperometry. In the chemo-resistive mode, the DR performance is much extended especially in low-resistance range. Its read-out integrated circuit was fabricated in a 0.18-\n<inline-formula> <tex-math>$\\mu $ </tex-math></inline-formula>\nm CMOS process. For system-level feasibility, a wireless sensor prototype with inhouse sensor devices was manufactured and experimentally verified, achieving measured DRs of 164.5 dB for current-type and 188 dB for resistive-type sensors.","PeriodicalId":13101,"journal":{"name":"IEEE Transactions on Circuits and Systems II: Express Briefs","volume":"71 12","pages":"4804-4808"},"PeriodicalIF":4.0000,"publicationDate":"2024-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Circuits and Systems II: Express Briefs","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10578061/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

A potentiostat-based wide dynamic range (DR) multi-sensor integrated interface is presented for heterogeneous chemical sensor applications. For versatility across various sensor kinds, a reconfigurable frontend structure based on the potentiostat is proposed to provide wide DR performance for multiple sensor types of electrochemical, chemo-resistive, and FET-based. Each operation mode for different sensor types is designed to support adaptive calibration capabilities on baseline, offset, and sensitivity. It is also designed to support selectable digital conversion methods for optimal conversion speed and resolution, depending on application requirements. In the electrochemical mode, bi-directional operation is implemented to support various detection methods including cyclic voltammetry and chronoamperometry. In the chemo-resistive mode, the DR performance is much extended especially in low-resistance range. Its read-out integrated circuit was fabricated in a 0.18-

$\mu $

m CMOS process. For system-level feasibility, a wireless sensor prototype with inhouse sensor devices was manufactured and experimentally verified, achieving measured DRs of 164.5 dB for current-type and 188 dB for resistive-type sensors.

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用于异质化学传感器应用的基于恒电位仪的宽 DR 多传感器集成接口

本文介绍了一种基于恒电位仪的宽动态范围（DR）多传感器集成接口，适用于异质化学传感器应用。为了实现各种传感器的通用性，提出了一种基于恒电位仪的可重构前端结构，为电化学、化学电阻和基于场效应晶体管的多种传感器类型提供宽动态范围性能。针对不同传感器类型设计的每种操作模式都支持基线、偏移和灵敏度的自适应校准功能。根据应用要求，它还支持可选择的数字转换方法，以获得最佳转换速度和分辨率。在电化学模式下，可实现双向操作，以支持各种检测方法，包括循环伏安法和计时器法。在化学电阻模式下，DR 性能大大提高，尤其是在低电阻范围内。其读出集成电路采用 0.18 英寸 CMOS 工艺制造。为了实现系统级的可行性，利用内部传感器设备制造了一个无线传感器原型，并进行了实验验证，测得电流型传感器的 DR 值为 164.5 dB，电阻型传感器的 DR 值为 188 dB。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Circuits and Systems II: Express Briefs 工程技术-工程：电子与电气

CiteScore

7.90

自引率

20.50%

发文量

883

审稿时长

3.0 months

期刊介绍： TCAS II publishes brief papers in the field specified by the theory, analysis, design, and practical implementations of circuits, and the application of circuit techniques to systems and to signal processing. Included is the whole spectrum from basic scientific theory to industrial applications. The field of interest covered includes: Circuits: Analog, Digital and Mixed Signal Circuits and Systems Nonlinear Circuits and Systems, Integrated Sensors, MEMS and Systems on Chip, Nanoscale Circuits and Systems, Optoelectronic Circuits and Systems, Power Electronics and Systems Software for Analog-and-Logic Circuits and Systems Control aspects of Circuits and Systems.