Impact of Porous Matrix Morphology on the Phase Diagrams in the GaInSn Alloy Under Nanoconfinement

IF 1.1 4区 物理与天体物理 Q4 PHYSICS, ATOMIC, MOLECULAR & CHEMICAL
A. A. Vasilev, D. Yu. Nefedov, E. V. Charnaya, Yu. A. Kumzerov, A. V. Fokin
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引用次数: 0

Abstract

Gallium alloys are widespread materials in microelectronics and are promising as components of nanocomposites for using in soft robotics, wearable electronics, and sensors. Here, we present NMR studies of the impact of a particular nanoconfinement on the phase diagram for the GaInSn eutectic alloy in a porous Al2O3 ceramic template with the middle pore size 11 nm. Measurements of the NMR spectra and Knight shifts were carried out for 71Ga, 69Ga, and 115In isotopes from 180 to 310 K. The precipitation of gallium-rich segregates with crystalline structures of α- and β-Ga was found at cooling. The evolution of the NMR lines during cooling and warming evidenced the occurrence of the liquid–liquid-phase transition in the melt fraction with pronounced amount of indium. The results obtained for the GaInSn alloy embedded into the porous aluminum oxide ceramic were found to differ remarkably from the phase diagrams of the alloy confined within silica opal and glass porous matrices.

Abstract Image

多孔基质形态对纳米强化下 GaInSn 合金相图的影响
镓合金是微电子学中广泛使用的材料,作为纳米复合材料的成分,它在软机器人、可穿戴电子设备和传感器中的应用前景广阔。在此,我们就特定纳米细化对中间孔径为 11 纳米的多孔 Al2O3 陶瓷模板中 GaInSn 共晶合金相图的影响进行了核磁共振研究。在 180 至 310 K 范围内,对 71Ga、69Ga 和 115In 同位素进行了核磁共振波谱和 Knight 移位测量。冷却和升温过程中核磁共振谱线的变化证明,在含有大量铟的熔体部分发生了液-液相转变。嵌入多孔氧化铝陶瓷中的 GaInSn 合金的研究结果与嵌入硅蛋白石和玻璃多孔基质中的合金相图有明显不同。
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来源期刊
Applied Magnetic Resonance
Applied Magnetic Resonance 物理-光谱学
CiteScore
1.90
自引率
10.00%
发文量
59
审稿时长
2.3 months
期刊介绍: Applied Magnetic Resonance provides an international forum for the application of magnetic resonance in physics, chemistry, biology, medicine, geochemistry, ecology, engineering, and related fields. The contents include articles with a strong emphasis on new applications, and on new experimental methods. Additional features include book reviews and Letters to the Editor.
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