A design methodology for highly reliable operation for 2T0C dynamic random access memory application based on IGZO channel-all-around ferroelectric field-effect transistors

IF 1.5 4区物理与天体物理 Q3 PHYSICS, APPLIED

Japanese Journal of Applied Physics Pub Date : 2024-06-07 DOI:10.35848/1347-4065/ad455b

Jing Liang, Peng Yuan, Yong Yu, Jinjuan Xiang, Zhengyong Zhu, Menglong Zhou, Feng Shao, Yanan Lu, Jin Dai, Sangdon Yi, Guilei Wang, Jing Zhang, Bryan Kang, Chao Zhao

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引用次数: 0

Abstract

In this paper, the memory characteristics of In-Ga-Zn-O (IGZO)-channel ferroelectric FETs (FeFETs) with stackable vertical channel-all-around structure are investigated by technology computer-aided design (TCAD) simulation. The simulated drain current–gate voltage (I _DS–V _GS) curves of the IGZO FeFET show an on–off ratio of up to 10⁷ and a memory window of 1.76 V, proving that ferroelectric hafnium oxide (FE-HfO₂) is suitable for a 2T0C transistor. To solve the potential current-sharing problem of the 2T0C dynamic random access memory (DRAM) array, an advanced operation design methodology is proposed, which utilizes the bipolar polarization characteristics of FE-HfO₂. This solution shows a remarkable current ratio between data “1” and data “0”, not only demonstrating the feasibility of the IGZO-based FeFET on 2T0C DRAM memory cells, but also providing an array design guideline for highly reliable 2T0C memory applications.

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基于 IGZO 沟道式全方位铁电场效应晶体管的 2T0C 动态随机存取存储器应用的高可靠性运行设计方法

本文通过技术计算机辅助设计（TCAD）仿真研究了具有可堆叠垂直沟道全方位结构的 In-Ga-Zn-O (IGZO) 沟道铁电场效应晶体管（FeFET）的存储器特性。IGZO FeFET 的模拟漏极电流-栅极电压（IDS-VGS）曲线显示，其导通-关断比高达 107，存储窗口为 1.76 V，证明铁电氧化铪（FE-HfO2）适用于 2T0C 晶体管。为了解决 2T0C 动态随机存取存储器（DRAM）阵列潜在的分流问题，我们提出了一种先进的运行设计方法，该方法利用了 FE-HfO2 的双极性极化特性。该解决方案在数据 "1 "和数据 "0 "之间实现了显著的电流比，不仅证明了基于 IGZO 的 FeFET 在 2T0C DRAM 存储单元上的可行性，还为高可靠性 2T0C 存储器应用提供了阵列设计指南。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Japanese Journal of Applied Physics 物理-物理：应用

CiteScore

3.00

自引率

26.70%

发文量

818

审稿时长

3.5 months

期刊介绍： The Japanese Journal of Applied Physics (JJAP) is an international journal for the advancement and dissemination of knowledge in all fields of applied physics. JJAP is a sister journal of the Applied Physics Express (APEX) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP). JJAP publishes articles that significantly contribute to the advancements in the applications of physical principles as well as in the understanding of physics in view of particular applications in mind. Subjects covered by JJAP include the following fields: • Semiconductors, dielectrics, and organic materials • Photonics, quantum electronics, optics, and spectroscopy • Spintronics, superconductivity, and strongly correlated materials • Device physics including quantum information processing • Physics-based circuits and systems • Nanoscale science and technology • Crystal growth, surfaces, interfaces, thin films, and bulk materials • Plasmas, applied atomic and molecular physics, and applied nuclear physics • Device processing, fabrication and measurement technologies, and instrumentation • Cross-disciplinary areas such as bioelectronics/photonics, biosensing, environmental/energy technologies, and MEMS