Structural and Magnetization Studies of Cu Buffered Fe-Ga Films Grown on Si and Si/SiO2 Substrates

Abstract

In this paper, we report a systematic study on effect of film thickness and substrate temperature on structural and magnetic behaviour of Fe-Ga films with Cu buffer layer, deposited on Si and Si/SiO₂ substrates at room and high substrate temperatures. Grazing incidence X-ray diffraction studies reveal that all the films are crystalline with disordered alpha-Fe phase, which is BCC A2 phase. At 300 °C of substrate temperature, films deposited on Si/SiO₂ substrate found to nucleate L1₂ phase from matrix of A2 phase, which is not seen in Si based films. Irrespective of substrate material, Fe-Ga films found to exist in dual phases at 500 °C substrate temperature. Lattice strains of the films were calculated from X-ray diffraction patterns, using Williamson-Hall method. From X- ray reflectivity analysis of all the films, film density, thickness and roughness of Fe-Ga layer and buffer layer were obtained after fitting the reflectivity data. Presence of an oxide layer is also evident from reflectivity fitting analysis. From magnetization studies it is clear that, all the films exhibited strong in-plane anisotropy. Saturation magnetization of films was found to vary with change in film density and oxide layer thickness of films. Saturation magnetization of films deposited on Si substrates found to decrease with decrease in film density. Coercivity of films found to vary with change in crystallite size, interface roughness and lattice strain of films. Films deposited on Si substrates are sensitive to strain with change in film thickness and films deposited on Si/SiO₂ substrates are sensitive to strain with change in deposition temperature. Coercivity in films found to decrease with decrease in film roughness, increase in crystallite size and lowering the tensile lattice strain.