Suppressing The Blistering of Silicon Nitride in PERC Solar Cells for High Industrial Yield

IF 1.8 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

ECS Journal of Solid State Science and Technology Pub Date : 2024-06-11 DOI:10.1149/2162-8777/ad52c3

Hai-Rong Zhu, Yan Lei, Zhi-Qiang Gao, Xu-Jie Li, Ping Peng, Yuan Lin

引用次数: 0

Abstract

Passivated emitter and rear contact (PERC) solar cells possess the highest photovoltaic market share at present. In industrial production, blistering of the rear silicon nitride (SiN_x) passivation layer significantly affects the yield. In order to solve this problem, the relevant processes for manufacturing the PERC solar cells have been carefully studied. It was found that polishing of the silicon wafer rear surface, aluminum (AlO_x) thickness, and the deposition process of the SiN_x layer will affect the blistering ratio. By optimizing the manufacturing process mentioned above, the blistering ratio of the PERC solar cells has been effectively suppressed. This work not only provides reliable technical support for the yield improvement of the PERC solar cells but also provides some useful reference for the tunnel oxide passivated contact (TOPcon) and back contact (BC) solar cell industrial manufacture.

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抑制 PERC 太阳能电池中的氮化硅起泡，提高工业产量

目前，钝化发射极和后触点（PERC）太阳能电池占据了光伏市场的最高份额。在工业生产中，后氮化硅（SiNx）钝化层的起泡严重影响了产量。为了解决这一问题，我们对制造 PERC 太阳能电池的相关工艺进行了仔细研究。研究发现，硅晶片后表面的抛光、铝（AlOx）厚度和氮化硅（SiNx）层的沉积工艺都会影响起泡率。通过优化上述制造工艺，PERC 太阳能电池的起泡率得到了有效抑制。这项工作不仅为提高 PERC 太阳能电池的良率提供了可靠的技术支持，也为隧道氧化物钝化接触（TOPcon）和背接触（BC）太阳能电池的工业化生产提供了一些有益的参考。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

ECS Journal of Solid State Science and Technology MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED

CiteScore

4.50

自引率

13.60%

发文量

455

期刊介绍： The ECS Journal of Solid State Science and Technology (JSS) was launched in 2012, and publishes outstanding research covering fundamental and applied areas of solid state science and technology, including experimental and theoretical aspects of the chemistry and physics of materials and devices. JSS has five topical interest areas: carbon nanostructures and devices dielectric science and materials electronic materials and processing electronic and photonic devices and systems luminescence and display materials, devices and processing.