Piezotronic N+ -ITO/P-NiO/N-ZnO Heterojunction Thin-Film Diode as a Flexible Energy Scavenger

IF 2 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Shuxin Lin;Emad Iranmanesh;Lin Zhao;Weiwei Li;Haris Doumanidis;Hang Zhou;Kai Wang
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引用次数: 0

Abstract

This paper reports on an all-oxide thin film piezotronic P-N heterojunction diode incorporating vertically-stacked structure of N+-ITO/P-type nickel oxide/N-type zinc oxide as a flexible energy scavenger and its diode characteristics on signal regulation which simplifies an essential element for harvesting which is signal rectification circuitry. An energy band diagram, theoretical modeling and equivalent small-signal circuit elaborate its working principle and device physics. Signal amplification due to introduction of in-series capacitances related to junction formation has also been addressed. A preliminary experimental study demonstrates applicability of such a flexible energy scavenger in various gratis non-stop thrusts originating from human body motions such as: simple tapping (as in typing) and walking actions for generating $\mu $ W-range power. Moreover, focusing on a simple power management system along with analysis of voltage waveforms in response to both resistive and capacitive loads unveils that the device is capable of quickly charging a capacitor and discharging it slowly allowing for possible energy storage. The estimation on generated power by a pixelated array that is obtainable due to ease of large-area fabrication processes and a single-pixel strip-based device exabits its feasibility as an energy source to power up some IoT nodes.
作为柔性能量清除器的压电 N+-ITO/P-NiO/N-ZnO 异质结薄膜二极管
本文介绍了一种全氧化物薄膜压电 P-N 异质结二极管,它采用 N+-ITO/P 型氧化镍/N 型氧化锌的垂直叠层结构作为柔性能量清除器,其二极管在信号调节方面的特性简化了信号整流电路这一采集的基本要素。能带图、理论建模和等效小信号电路阐述了其工作原理和器件物理特性。此外,还讨论了由于引入与结形成相关的串联电容而导致的信号放大。初步实验研究表明,这种柔性能量清除器适用于源于人体运动的各种无偿不间断推力,例如:简单的敲击(如打字)和行走动作,以产生 $\mu $ W 范围的功率。此外,对简单电源管理系统的关注,以及对响应电阻和电容负载的电压波形的分析,揭示了该设备能够对电容器快速充电和缓慢放电,从而实现可能的能量存储。由于大面积制造工艺和基于单像素条带的设备非常容易实现,因此对像素阵列产生的功率进行了估算,从而证明了其作为一种能源为某些物联网节点供电的可行性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
IEEE Journal of the Electron Devices Society
IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology
CiteScore
5.20
自引率
4.30%
发文量
124
审稿时长
9 weeks
期刊介绍: The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.
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