Battery resistance and its effects on performance of laminate film-type Co-PBA/Ni-PBA tertiary battery

IF 1.5 4区物理与天体物理 Q3 PHYSICS, APPLIED

Japanese Journal of Applied Physics Pub Date : 2024-06-10 DOI:10.35848/1347-4065/ad45d1

Kentaro Furuuchi, Yuga Taniguchi, Yicheng Bao, Hideharu Niwa and Yutaka Moritomo

引用次数: 0

Abstract

A tertiary battery (TB) can be charged by heating or cooling via the difference in the electrochemical Seebeck coefficient α between the cathode and anode. Here, we investigated the battery resistance R and its effect on the performance of a laminate film-type Na1.48Co[Fe(CN)6]0.87 (Co-PBA)/Na1.76Ni[Fe(CN)6]0.94 (Ni-PBA) TB. We found that the charge-transfer resistance Rct and diffusion resistance Rdif are the dominant components of R, while the solution resistance Rs has a minor role. Regardless of the solute type, R varied inversely proportional to the Na+ concentration M. In a high-R TB, the thermal voltage VTB and discharge capacity QTB per unit weight of the total active material are significantly suppressed, which is quantitatively explained in terms of the voltage drop (IR, where I is current) during the discharge process.

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电池电阻及其对层压膜型 Co-PBA/Ni-PBA 三级电池性能的影响

三级电池（TB）可通过阴极和阳极之间电化学塞贝克系数 α 的差异进行加热或冷却充电。在此，我们研究了电池电阻 R 及其对层压膜型 Na1.48Co[Fe(CN)6]0.87 (Co-PBA)/Na1.76Ni[Fe(CN)6]0.94 (Ni-PBA) TB 性能的影响。我们发现，电荷转移电阻 Rct 和扩散电阻 Rdif 是 R 的主要成分，而溶液电阻 Rs 的作用较小。在高电阻 TB 中，单位重量总活性材料的热电压 VTB 和放电容量 QTB 受到显著抑制，这可以用放电过程中的电压降（IR，其中 I 为电流）来定量解释。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Japanese Journal of Applied Physics 物理-物理：应用

CiteScore

3.00

自引率

26.70%

发文量

818

审稿时长

3.5 months

期刊介绍： The Japanese Journal of Applied Physics (JJAP) is an international journal for the advancement and dissemination of knowledge in all fields of applied physics. JJAP is a sister journal of the Applied Physics Express (APEX) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP). JJAP publishes articles that significantly contribute to the advancements in the applications of physical principles as well as in the understanding of physics in view of particular applications in mind. Subjects covered by JJAP include the following fields: • Semiconductors, dielectrics, and organic materials • Photonics, quantum electronics, optics, and spectroscopy • Spintronics, superconductivity, and strongly correlated materials • Device physics including quantum information processing • Physics-based circuits and systems • Nanoscale science and technology • Crystal growth, surfaces, interfaces, thin films, and bulk materials • Plasmas, applied atomic and molecular physics, and applied nuclear physics • Device processing, fabrication and measurement technologies, and instrumentation • Cross-disciplinary areas such as bioelectronics/photonics, biosensing, environmental/energy technologies, and MEMS