{"title":"Modifications of bismuth molybdates through selective additions of Zn2+: an efficient photocatalyst for solar-driven water splitting applications","authors":"Swarnendu Baduri, Sangeeta Ghosh, Debasish Ray, Jitendra Kumar Singh, Han-Seung Lee, Chinmoy Bhattacharya","doi":"10.1007/s10008-024-05986-4","DOIUrl":null,"url":null,"abstract":"<div><p>The improvement of the water oxidation capability of bismuth molybdate (BM) with selective metal addition under illumination was examined. BM and its Zn-modified (different atomic %) photoanodes were developed over conducting glass substrate through the cost-effective drop-cast method. The maximum photocurrent of ~ 240 µA/cm<sup>2</sup> at an applied potential of 1.3 V vs Ag/AgCl was recorded for the 2% Zn modified sample in 0.1 M Na<sub>2</sub>SO<sub>4</sub> solution (PBS, pH 7) under 100 mW/cm<sup>2</sup> illuminations. Surface characterizations like scanning electron microscopy, X-ray diffraction, energy dispersive X-ray analysis, and optical analysis such as UV–vis absorbance, photoluminescence, FT-IR, and Raman spectroscopic analyses were performed to determine the physicochemical properties of the semiconductor. The pure bismuth molybdate shows an optical band gap of ~ 2.78 eV, which decreases for the Zn-modified sample, and a minimum of 2.55 eV is detected for the optimized sample. The XRD analysis also reveals that Zn addition into the bismuth molybdate matrix decreases crystallite size with variation in proportions of the constituent metal oxides. The stability of the semiconductors regarding the PEC water oxidation reaction indicates promising results even under continuous illumination for 1 h. The Mott-Schottky study reveals the n-type nature of the semiconductors, whereas the Nyquist analysis indicates minimum charge transfer resistance for the 2% Zn-BMO sample. The PEC action spectra for the optimized photoanode indicate a maximum of 34% incident photon to current conversion efficiency with corresponding 38% absorbed photon to current conversion efficiency, which is more than three times than that of the pure bismuth molybdate.</p></div>","PeriodicalId":665,"journal":{"name":"Journal of Solid State Electrochemistry","volume":"28 10","pages":"3841 - 3855"},"PeriodicalIF":2.6000,"publicationDate":"2024-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Solid State Electrochemistry","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10008-024-05986-4","RegionNum":4,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ELECTROCHEMISTRY","Score":null,"Total":0}
引用次数: 0
Abstract
The improvement of the water oxidation capability of bismuth molybdate (BM) with selective metal addition under illumination was examined. BM and its Zn-modified (different atomic %) photoanodes were developed over conducting glass substrate through the cost-effective drop-cast method. The maximum photocurrent of ~ 240 µA/cm2 at an applied potential of 1.3 V vs Ag/AgCl was recorded for the 2% Zn modified sample in 0.1 M Na2SO4 solution (PBS, pH 7) under 100 mW/cm2 illuminations. Surface characterizations like scanning electron microscopy, X-ray diffraction, energy dispersive X-ray analysis, and optical analysis such as UV–vis absorbance, photoluminescence, FT-IR, and Raman spectroscopic analyses were performed to determine the physicochemical properties of the semiconductor. The pure bismuth molybdate shows an optical band gap of ~ 2.78 eV, which decreases for the Zn-modified sample, and a minimum of 2.55 eV is detected for the optimized sample. The XRD analysis also reveals that Zn addition into the bismuth molybdate matrix decreases crystallite size with variation in proportions of the constituent metal oxides. The stability of the semiconductors regarding the PEC water oxidation reaction indicates promising results even under continuous illumination for 1 h. The Mott-Schottky study reveals the n-type nature of the semiconductors, whereas the Nyquist analysis indicates minimum charge transfer resistance for the 2% Zn-BMO sample. The PEC action spectra for the optimized photoanode indicate a maximum of 34% incident photon to current conversion efficiency with corresponding 38% absorbed photon to current conversion efficiency, which is more than three times than that of the pure bismuth molybdate.
期刊介绍:
The Journal of Solid State Electrochemistry is devoted to all aspects of solid-state chemistry and solid-state physics in electrochemistry.
The Journal of Solid State Electrochemistry publishes papers on all aspects of electrochemistry of solid compounds, including experimental and theoretical, basic and applied work. It equally publishes papers on the thermodynamics and kinetics of electrochemical reactions if at least one actively participating phase is solid. Also of interest are articles on the transport of ions and electrons in solids whenever these processes are relevant to electrochemical reactions and on the use of solid-state electrochemical reactions in the analysis of solids and their surfaces.
The journal covers solid-state electrochemistry and focusses on the following fields: mechanisms of solid-state electrochemical reactions, semiconductor electrochemistry, electrochemical batteries, accumulators and fuel cells, electrochemical mineral leaching, galvanic metal plating, electrochemical potential memory devices, solid-state electrochemical sensors, ion and electron transport in solid materials and polymers, electrocatalysis, photoelectrochemistry, corrosion of solid materials, solid-state electroanalysis, electrochemical machining of materials, electrochromism and electrochromic devices, new electrochemical solid-state synthesis.
The Journal of Solid State Electrochemistry makes the professional in research and industry aware of this swift progress and its importance for future developments and success in the above-mentioned fields.