Mobility Characteristics of ZnMgO/ZnO Heterostructures with Screening Effects

IF 0.9 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER
Z. Yarar, M. D. Alyörük, H. C. Çekil, B. Özdemir, M. Özdemir
{"title":"Mobility Characteristics of ZnMgO/ZnO Heterostructures with Screening Effects","authors":"Z. Yarar, M. D. Alyörük, H. C. Çekil, B. Özdemir, M. Özdemir","doi":"10.1134/s1063783423600061","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The electron mobility characteristics of a ZnMgO/ZnO heterostructure are systematically investigated by an ensemble Monte Carlo method. Screening effects are included in all electron scattering mechanisms. The mobilities are calculated for a temperature range of 4 to 300 K and Mg contents ranging from 8.5 to 44%. In this range, dislocation scattering (DS) and interface roughness scattering (IFR) are highly effective for low and high values of Mg compositions, respectively. Screening effects must be considered in scattering mechanisms to achieve a reasonable agreement with existing experimental results. Our findings could be significant for the design and optimization of ZnO-based devices.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":null,"pages":null},"PeriodicalIF":0.9000,"publicationDate":"2024-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physics of the Solid State","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1134/s1063783423600061","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0

Abstract

The electron mobility characteristics of a ZnMgO/ZnO heterostructure are systematically investigated by an ensemble Monte Carlo method. Screening effects are included in all electron scattering mechanisms. The mobilities are calculated for a temperature range of 4 to 300 K and Mg contents ranging from 8.5 to 44%. In this range, dislocation scattering (DS) and interface roughness scattering (IFR) are highly effective for low and high values of Mg compositions, respectively. Screening effects must be considered in scattering mechanisms to achieve a reasonable agreement with existing experimental results. Our findings could be significant for the design and optimization of ZnO-based devices.

Abstract Image

具有屏蔽效应的 ZnMgO/ZnO 异质结构的迁移特性
摘要 采用集合蒙特卡罗方法系统地研究了氧化锌/氧化镁异质结构的电子迁移率特性。所有的电子散射机制都包含了屏蔽效应。计算了温度范围为 4 至 300 K、镁含量为 8.5% 至 44% 的迁移率。在这一范围内,位错散射(DS)和界面粗糙度散射(IFR)对低镁含量和高镁含量分别非常有效。散射机制中必须考虑屏蔽效应,才能与现有实验结果达成合理一致。我们的发现对氧化锌基器件的设计和优化具有重要意义。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Physics of the Solid State
Physics of the Solid State 物理-物理:凝聚态物理
CiteScore
1.70
自引率
0.00%
发文量
60
审稿时长
2-4 weeks
期刊介绍: Presents the latest results from Russia’s leading researchers in condensed matter physics at the Russian Academy of Sciences and other prestigious institutions. Covers all areas of solid state physics including solid state optics, solid state acoustics, electronic and vibrational spectra, phase transitions, ferroelectricity, magnetism, and superconductivity. Also presents review papers on the most important problems in solid state physics.
文献相关原料
公司名称 产品信息 采购帮参考价格
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信