{"title":"Rapid Chemical Vapor Transport Growth of Inorganic Double Helix Tin Iodide Phosphide Crystals with Increased Yield and Their Liquid-Phase Exfoliation","authors":"Mudussar Ali, Bowen Zhang, Wujia Chen, Kezheng Tao, Qiang Li, Qingfeng Yan","doi":"10.1021/acs.chemmater.4c01162","DOIUrl":null,"url":null,"abstract":"Tin iodide phosphide (SnIP), the first atomic-scale one-dimensional (1D) double-helical inorganic semiconductor, has triggered growing interest due to its high structural flexibility, excellent electron mobility, and remarkable optical properties. Chemical vapor transport reaction has been the sole approach to growing SnIP crystals, though it suffers from time-consumption (∼2–3 weeks) and low yield. Inspired by its unique structure and properties, advancing rapid growth of SnIP crystals with a high yield is crucial. Herein, a systematic series of experiments have been designed to search the suitable synthesis conditions, viz., temperature gradient and temperature variations as well as precursors amount and ampule lengths to achieve the optimal conditions for the synthesis of SnIP crystals. Three transport agents, namely, SnI<sub>2</sub>, SnI<sub>4</sub>, and I<sub>2</sub>, were analyzed and compared, and SnI<sub>2</sub> was deemed the most suitable agent for SnIP crystal growth. The optimal synthetic route enables high-yield (up to 84%) and high-quality SnIP crystals at a maximum temperature of 600 °C within only 10 days. Additionally, a comprehensive exploration of liquid-phase exfoliation of SnIP crystals is investigated to screen the optimal solvent in terms of the total surface tensions and polar/dispersive component ratios. It is demonstrated that cyclohexane can effectively isolate as-grown SnIP crystals into SnIP nanowires (NWs), boasting a high aspect ratio exceeding 950. The exfoliated NWs show smooth surfaces and clear signatures of the 1D SnIP helix. These findings shed light on the future applications of double-helical SnIP crystals in flexible electronics, mechanical sensors, and semiconductor devices.","PeriodicalId":33,"journal":{"name":"Chemistry of Materials","volume":null,"pages":null},"PeriodicalIF":7.2000,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Chemistry of Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1021/acs.chemmater.4c01162","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0
Abstract
Tin iodide phosphide (SnIP), the first atomic-scale one-dimensional (1D) double-helical inorganic semiconductor, has triggered growing interest due to its high structural flexibility, excellent electron mobility, and remarkable optical properties. Chemical vapor transport reaction has been the sole approach to growing SnIP crystals, though it suffers from time-consumption (∼2–3 weeks) and low yield. Inspired by its unique structure and properties, advancing rapid growth of SnIP crystals with a high yield is crucial. Herein, a systematic series of experiments have been designed to search the suitable synthesis conditions, viz., temperature gradient and temperature variations as well as precursors amount and ampule lengths to achieve the optimal conditions for the synthesis of SnIP crystals. Three transport agents, namely, SnI2, SnI4, and I2, were analyzed and compared, and SnI2 was deemed the most suitable agent for SnIP crystal growth. The optimal synthetic route enables high-yield (up to 84%) and high-quality SnIP crystals at a maximum temperature of 600 °C within only 10 days. Additionally, a comprehensive exploration of liquid-phase exfoliation of SnIP crystals is investigated to screen the optimal solvent in terms of the total surface tensions and polar/dispersive component ratios. It is demonstrated that cyclohexane can effectively isolate as-grown SnIP crystals into SnIP nanowires (NWs), boasting a high aspect ratio exceeding 950. The exfoliated NWs show smooth surfaces and clear signatures of the 1D SnIP helix. These findings shed light on the future applications of double-helical SnIP crystals in flexible electronics, mechanical sensors, and semiconductor devices.
期刊介绍:
The journal Chemistry of Materials focuses on publishing original research at the intersection of materials science and chemistry. The studies published in the journal involve chemistry as a prominent component and explore topics such as the design, synthesis, characterization, processing, understanding, and application of functional or potentially functional materials. The journal covers various areas of interest, including inorganic and organic solid-state chemistry, nanomaterials, biomaterials, thin films and polymers, and composite/hybrid materials. The journal particularly seeks papers that highlight the creation or development of innovative materials with novel optical, electrical, magnetic, catalytic, or mechanical properties. It is essential that manuscripts on these topics have a primary focus on the chemistry of materials and represent a significant advancement compared to prior research. Before external reviews are sought, submitted manuscripts undergo a review process by a minimum of two editors to ensure their appropriateness for the journal and the presence of sufficient evidence of a significant advance that will be of broad interest to the materials chemistry community.