Memristive circuits based on multilayer hexagonal boron nitride for millimetre-wave radiofrequency applications

IF 33.7 1区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

Nature Electronics Pub Date : 2024-07-01 DOI:10.1038/s41928-024-01192-2

Sebastian Pazos, Yaqing Shen, Haoran Zhang, Jordi Verdú, Andrés Fontana, Wenwen Zheng, Yue Yuan, Osamah Alharbi, Yue Ping, Eloi Guerrero, Lluís Acosta, Pedro de Paco, Dimitra Psychogiou, Atif Shamim, Deji Akinwande, Mario Lanza

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引用次数: 0

Abstract

Radiofrequency switches that drive or block high-frequency electromagnetic signals—typically, a few to tens of gigahertz—are essential components in modern communication devices. However, demand for higher data transmission rates requires radiofrequency switches capable of operating at frequencies beyond 100 GHz, which is challenging for current technologies. Here we report ambipolar memristive radiofrequency switches that are based on multilayer hexagonal boron nitride and can operate at frequencies up to 260 GHz. The ambipolar behaviour, which could help reduce peripheral hardware requirements, is due to a Joule-effect-assisted reset. We show switching in 21 devices with low-resistance states averaging 294 Ω and endurances of 2,000 cycles. With further biasing optimization, we reduce the resistance to 9.3 ± 3.7 Ω over more than 475 cycles, and achieve an insertion loss of 0.9 dB at 120 GHz. We also build a series–shunt device configuration with an isolation of 35 dB at 120 GHz. An optimized pulsed voltage write–verify switching approach can be used to improve the switching performance of memristors based on hexagonal boron nitride for radiofrequency circuit applications.

Abstract Image

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用于毫米波射频应用的基于多层六方氮化硼的薄膜电路

驱动或阻断高频电磁信号（通常为几千兆赫到几十千兆赫）的射频开关是现代通信设备的重要组件。然而，对更高数据传输速率的需求要求射频开关能够在 100 千兆赫以上的频率下工作，这对现有技术来说具有挑战性。在此，我们报告了基于多层六方氮化硼的伏极性忆阻式射频开关，其工作频率可达 260 GHz。由于焦耳效应辅助复位，这种伏极行为有助于降低外围硬件要求。我们在 21 个器件中展示了开关，其低电阻状态平均为 294 Ω，持续时间为 2,000 个周期。通过进一步偏置优化，我们在超过 475 个周期内将电阻降至 9.3 ± 3.7 Ω，并在 120 GHz 时实现了 0.9 dB 的插入损耗。我们还构建了一种串联-并联器件配置，在 120 GHz 时的隔离度为 35 dB。

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来源期刊

Nature Electronics Engineering-Electrical and Electronic Engineering

CiteScore

47.50

自引率

2.30%

发文量

159

期刊介绍： Nature Electronics is a comprehensive journal that publishes both fundamental and applied research in the field of electronics. It encompasses a wide range of topics, including the study of new phenomena and devices, the design and construction of electronic circuits, and the practical applications of electronics. In addition, the journal explores the commercial and industrial aspects of electronics research. The primary focus of Nature Electronics is on the development of technology and its potential impact on society. The journal incorporates the contributions of scientists, engineers, and industry professionals, offering a platform for their research findings. Moreover, Nature Electronics provides insightful commentary, thorough reviews, and analysis of the key issues that shape the field, as well as the technologies that are reshaping society. Like all journals within the prestigious Nature brand, Nature Electronics upholds the highest standards of quality. It maintains a dedicated team of professional editors and follows a fair and rigorous peer-review process. The journal also ensures impeccable copy-editing and production, enabling swift publication. Additionally, Nature Electronics prides itself on its editorial independence, ensuring unbiased and impartial reporting. In summary, Nature Electronics is a leading journal that publishes cutting-edge research in electronics. With its multidisciplinary approach and commitment to excellence, the journal serves as a valuable resource for scientists, engineers, and industry professionals seeking to stay at the forefront of advancements in the field.