Electrical uniformity analyses on 12-inch Si-based Hf0.5Zr0.5O2 ferroelectric capacitor devices by atomic layer deposition

IF 4.8 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Progress in Natural Science: Materials International Pub Date : 2024-06-01 DOI:10.1016/j.pnsc.2024.05.008

Wen-Juan Ding , Yu Liu , Zhi-Qiang Xiao , Li Gao , Yu-Chen Li , Lin Zhu , Xiang Li , Wei-Min Li , Shuang Chen , Ai-Dong Li

{"title":"Electrical uniformity analyses on 12-inch Si-based Hf0.5Zr0.5O2 ferroelectric capacitor devices by atomic layer deposition","authors":"Wen-Juan Ding , Yu Liu , Zhi-Qiang Xiao , Li Gao , Yu-Chen Li , Lin Zhu , Xiang Li , Wei-Min Li , Shuang Chen , Ai-Dong Li","doi":"10.1016/j.pnsc.2024.05.008","DOIUrl":null,"url":null,"abstract":"<div>The study on the uniformity of electrical performance of large wafer-scale Hf0.5Zr0.5O2 (HZO) ferroelectric capacitors is still lacking yet now. In this work, TiN/HZO/TiN metal-ferroelectric-metal (MFM) devices on 12-inch silicon wafers have been fabricated by thermal atomic layer deposition. The correlation of thickness uniformity with device-to-device variation of electrical properties and yield of the 12-inch MFM system was investigated. It was found that the uniformity of ferroelectric properties is closely related to the variation of HZO thickness of the MFM system, the concentration of oxygen vacancies in the micro-region of the HZO film, and the ferroelectric phase micro-distribution on 12-inch Si wafer. This work provides some important information for the performance optimization of HfO2-based ferroelectric random access memories.</div>","PeriodicalId":20742,"journal":{"name":"Progress in Natural Science: Materials International","volume":"34 3","pages":"Pages 598-605"},"PeriodicalIF":4.8000,"publicationDate":"2024-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Progress in Natural Science: Materials International","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1002007124001199","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

Abstract

The study on the uniformity of electrical performance of large wafer-scale Hf_0.5Zr_0.5O₂ (HZO) ferroelectric capacitors is still lacking yet now. In this work, TiN/HZO/TiN metal-ferroelectric-metal (MFM) devices on 12-inch silicon wafers have been fabricated by thermal atomic layer deposition. The correlation of thickness uniformity with device-to-device variation of electrical properties and yield of the 12-inch MFM system was investigated. It was found that the uniformity of ferroelectric properties is closely related to the variation of HZO thickness of the MFM system, the concentration of oxygen vacancies in the micro-region of the HZO film, and the ferroelectric phase micro-distribution on 12-inch Si wafer. This work provides some important information for the performance optimization of HfO₂-based ferroelectric random access memories.

查看原文本刊更多论文

通过原子层沉积对 12 英寸硅基 Hf0.5Zr0.5O2 铁电电容器器件进行电气均匀性分析

目前，有关大型晶圆级 Hf0.5Zr0.5O2（HZO）铁电容器电气性能均匀性的研究仍然缺乏。在这项工作中，通过热原子层沉积技术在 12 英寸硅晶片上制造了 TiN/HZO/TiN 金属-铁电-金属 (MFM) 器件。研究了厚度均匀性与 12 英寸 MFM 系统器件与器件之间电性能和良率变化的相关性。研究发现，铁电特性的均匀性与 MFM 系统的 HZO 厚度变化、HZO 薄膜微区的氧空位浓度以及 12 英寸硅晶片上的铁电相微观分布密切相关。这项工作为基于 HfO2 的铁电随机存取存储器的性能优化提供了一些重要信息。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Progress in Natural Science: Materials International 综合性期刊-综合性期刊

CiteScore

8.60

自引率

2.10%

发文量

2812

审稿时长

49 days

期刊介绍： Progress in Natural Science: Materials International provides scientists and engineers throughout the world with a central vehicle for the exchange and dissemination of basic theoretical studies and applied research of advanced materials. The emphasis is placed on original research, both analytical and experimental, which is of permanent interest to engineers and scientists, covering all aspects of new materials and technologies, such as, energy and environmental materials; advanced structural materials; advanced transportation materials, functional and electronic materials; nano-scale and amorphous materials; health and biological materials; materials modeling and simulation; materials characterization; and so on. The latest research achievements and innovative papers in basic theoretical studies and applied research of material science will be carefully selected and promptly reported. Thus, the aim of this Journal is to serve the global materials science and technology community with the latest research findings. As a service to readers, an international bibliography of recent publications in advanced materials is published bimonthly.