Feasibility study of fabricating 20 nm resolution dielectric Fresnel zone plates with ultrahigh aspect ratio for EUV optics

IF 2.6 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronic Engineering Pub Date : 2024-06-19 DOI:10.1016/j.mee.2024.112227

Qingxin Wu , Qiucheng Chen , Hao Quan , Xujie Tong , Jun Zhao , Yifang Chen

{"title":"Feasibility study of fabricating 20 nm resolution dielectric Fresnel zone plates with ultrahigh aspect ratio for EUV optics","authors":"Qingxin Wu , Qiucheng Chen , Hao Quan , Xujie Tong , Jun Zhao , Yifang Chen","doi":"10.1016/j.mee.2024.112227","DOIUrl":null,"url":null,"abstract":"<div><p>EUV light optics are either reflective or diffractive due to the substantial absorption characteristics by almost all materials. Despite great successes in manufacturing integrated circuit chips, reflective EUV optics are still unfriendly to small-to-medium enterprise (SME) because of the enormous costs. Recently, diffractive EUV optics has come to the light in hopes to be able to establish manufacturing nanoscale products and inspecting nanoscale structures. Diffractive zone plates with high resolution in EUV wavelengths are urgently needed. This paper reports our latest success in developing 20 nm resolution zone plates for focusing and imaging in the EUV and soft X-ray regions. It firstly discusses the diffraction efficiency of FZPs tailored for 13.5 nm wavelength to decide the essential height of the zone plate. Then, Monte Carlo simulation method was used to figure out the achievable zone plate parameters by high-resolution electron beam lithography (EBL). Finally, this work systematically explored the viability of nanofabricating top-tier 20 nm resolution hydrogen silsesquioxane (HSQ) zone plates with the duty cycle ratio nearing 1:1 and the aspect ratio approaching 13:1 on 50 nm thick Si<sub>3</sub>N<sub>4</sub> membranes.</p></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":null,"pages":null},"PeriodicalIF":2.6000,"publicationDate":"2024-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronic Engineering","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0167931724000960","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

EUV light optics are either reflective or diffractive due to the substantial absorption characteristics by almost all materials. Despite great successes in manufacturing integrated circuit chips, reflective EUV optics are still unfriendly to small-to-medium enterprise (SME) because of the enormous costs. Recently, diffractive EUV optics has come to the light in hopes to be able to establish manufacturing nanoscale products and inspecting nanoscale structures. Diffractive zone plates with high resolution in EUV wavelengths are urgently needed. This paper reports our latest success in developing 20 nm resolution zone plates for focusing and imaging in the EUV and soft X-ray regions. It firstly discusses the diffraction efficiency of FZPs tailored for 13.5 nm wavelength to decide the essential height of the zone plate. Then, Monte Carlo simulation method was used to figure out the achievable zone plate parameters by high-resolution electron beam lithography (EBL). Finally, this work systematically explored the viability of nanofabricating top-tier 20 nm resolution hydrogen silsesquioxane (HSQ) zone plates with the duty cycle ratio nearing 1:1 and the aspect ratio approaching 13:1 on 50 nm thick Si₃N₄ membranes.

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为超紫外光学元件制造具有超高长宽比的 20 nm 分辨率介质菲涅尔区板的可行性研究

由于几乎所有材料都具有大量吸收特性，因此 EUV 光学器件要么是反射式的，要么是衍射式的。尽管在制造集成电路芯片方面取得了巨大成功，但由于成本高昂，反射式极紫外光学器件对中小企业（SME）来说仍不友好。最近，衍射式极紫外光学技术开始受到关注，人们希望它能用于制造纳米级产品和检测纳米级结构。我们迫切需要在 EUV 波长上具有高分辨率的衍射区板。本文报告了我们在开发 20 nm 分辨率区域板方面取得的最新成功，该区域板可用于在 EUV 和软 X 射线区域聚焦和成像。论文首先讨论了为 13.5 nm 波长量身定制的 FZPs 的衍射效率，以确定区带板的基本高度。然后，采用蒙特卡洛模拟法计算出高分辨率电子束光刻（EBL）可实现的区板参数。最后，这项工作系统地探索了在 50 纳米厚的 Si3N4 膜上制造 20 纳米分辨率的顶级硅倍半氧烷氢（HSQ）区板的可行性，其占空比接近 1:1，纵横比接近 13:1。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Microelectronic Engineering 工程技术-工程：电子与电气

CiteScore

5.30

自引率

4.30%

发文量

131

审稿时长

29 days

期刊介绍： Microelectronic Engineering is the premier nanoprocessing, and nanotechnology journal focusing on fabrication of electronic, photonic, bioelectronic, electromechanic and fluidic devices and systems, and their applications in the broad areas of electronics, photonics, energy, life sciences, and environment. It covers also the expanding interdisciplinary field of "more than Moore" and "beyond Moore" integrated nanoelectronics / photonics and micro-/nano-/bio-systems. Through its unique mixture of peer-reviewed articles, reviews, accelerated publications, short and Technical notes, and the latest research news on key developments, Microelectronic Engineering provides comprehensive coverage of this exciting, interdisciplinary and dynamic new field for researchers in academia and professionals in industry.