Effect of repeating hydrothermal growth processes and rapid thermal annealing on CuO thin film properties.

IF 2.6 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY
Beilstein Journal of Nanotechnology Pub Date : 2024-06-24 eCollection Date: 2024-01-01 DOI:10.3762/bjnano.15.62
Monika Ozga, Eunika Zielony, Aleksandra Wierzbicka, Anna Wolska, Marcin Klepka, Marek Godlewski, Bogdan J Kowalski, Bartłomiej S Witkowski
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引用次数: 0

Abstract

This paper presents an investigation into the influence of repeating cycles of hydrothermal growth processes and rapid thermal annealing (HT+RTA) on the properties of CuO thin films. An innovative hydrothermal method ensures homogeneous single-phase films initially. However, their electrical instability and susceptibility to cracking under the influence of temperature have posed a challenge to their utilization in electronic devices. To address this limitation, the HT+RTA procedure has been developed, which effectively eliminated the issue. Comprehensive surface analysis confirmed the procedure's ability to yield continuous films in which the content of organic compounds responsible for the formation of cracks significantly decreases. Structural analysis underscored the achieved improvements in the crystalline quality of the films. The implementation of the HT+RTA procedure significantly enhances the potential of CuO films for electronic applications. Key findings from Kelvin probe force microscopy analysis demonstrate the possibility of modulating the work function of the material. In addition, scanning capacitance microscopy measurements provided information on the changes in the local carrier concentration with each repetition. These studies indicate the increased usefulness of CuO thin films obtained from the HT+RTA procedure, which expands the possibilities of their applications in electronic devices.

重复水热生长过程和快速热退火对氧化铜薄膜性能的影响。
本文研究了重复循环的水热生长过程和快速热退火(HT+RTA)对氧化铜薄膜特性的影响。一种创新的水热法最初可确保获得均匀的单相薄膜。然而,它们在温度影响下的电不稳定性和易开裂性对其在电子设备中的应用提出了挑战。为了解决这一局限性,我们开发了 HT+RTA 程序,有效地解决了这一问题。全面的表面分析证实,该工艺能够生成连续的薄膜,其中导致裂纹形成的有机化合物含量显著降低。结构分析强调了薄膜结晶质量的改善。HT+RTA 程序的实施大大提高了氧化铜薄膜在电子应用方面的潜力。开尔文探针力显微镜分析的主要发现证明了调节材料功函数的可能性。此外,扫描电容显微镜测量提供了每次重复时局部载流子浓度变化的信息。这些研究表明,通过 HT+RTA 程序获得的氧化铜薄膜的实用性得到了提高,从而扩大了其在电子设备中应用的可能性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Beilstein Journal of Nanotechnology
Beilstein Journal of Nanotechnology NANOSCIENCE & NANOTECHNOLOGY-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
5.70
自引率
3.20%
发文量
109
审稿时长
2 months
期刊介绍: The Beilstein Journal of Nanotechnology is an international, peer-reviewed, Open Access journal. It provides a unique platform for rapid publication without any charges (free for author and reader) – Platinum Open Access. The content is freely accessible 365 days a year to any user worldwide. Articles are available online immediately upon publication and are publicly archived in all major repositories. In addition, it provides a platform for publishing thematic issues (theme-based collections of articles) on topical issues in nanoscience and nanotechnology. The journal is published and completely funded by the Beilstein-Institut, a non-profit foundation located in Frankfurt am Main, Germany. The editor-in-chief is Professor Thomas Schimmel – Karlsruhe Institute of Technology. He is supported by more than 20 associate editors who are responsible for a particular subject area within the scope of the journal.
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