Yuan Gao, Shengrui Xu, Hongchang Tao, Huake Su, Xu Liu, Lei Xie, Kang Xu, Xia An, Jincheng Zhang, Yue Hao
{"title":"The enhanced GaN deposition on highly N-incorporated diamond substrate","authors":"Yuan Gao, Shengrui Xu, Hongchang Tao, Huake Su, Xu Liu, Lei Xie, Kang Xu, Xia An, Jincheng Zhang, Yue Hao","doi":"10.1016/j.matlet.2024.136865","DOIUrl":null,"url":null,"abstract":"<div><p>As typical impurities in diamonds, the incorporated nitrogen (N) atoms could alleviate the wetting issues of GaN deposition on diamonds. Therefore, GaN was deposited on the N-incorporated diamond substrate. Through X-ray diffraction (XRD) characterization, the enhanced AlN was observed on the highly-N incorporated diamond substrate. Moreover, GaN morphology on N-incorporated diamond was greatly enhanced, showcasing superior film quality, which would be further confirmed by the Raman and photoluminescence spectra. Notably, high-resolution XRD characterization unveiled a much narrower rocking curve for GaN films on N-incorporated diamond substrates, with a full width at half maximum of 2714 arcsec, compared to 7560 arcsec on N-free diamond substrates. In conclusion, utilizing N-incorporated diamond substrates is a practical approach for GaN-on-diamond deposition.</p></div>","PeriodicalId":384,"journal":{"name":"Materials Letters","volume":null,"pages":null},"PeriodicalIF":2.7000,"publicationDate":"2024-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Letters","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0167577X24010048","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
As typical impurities in diamonds, the incorporated nitrogen (N) atoms could alleviate the wetting issues of GaN deposition on diamonds. Therefore, GaN was deposited on the N-incorporated diamond substrate. Through X-ray diffraction (XRD) characterization, the enhanced AlN was observed on the highly-N incorporated diamond substrate. Moreover, GaN morphology on N-incorporated diamond was greatly enhanced, showcasing superior film quality, which would be further confirmed by the Raman and photoluminescence spectra. Notably, high-resolution XRD characterization unveiled a much narrower rocking curve for GaN films on N-incorporated diamond substrates, with a full width at half maximum of 2714 arcsec, compared to 7560 arcsec on N-free diamond substrates. In conclusion, utilizing N-incorporated diamond substrates is a practical approach for GaN-on-diamond deposition.
作为金刚石中的典型杂质,掺入的氮(N)原子可以缓解氮化镓沉积在金刚石上的润湿问题。因此,氮化镓被沉积在氮原子掺杂的金刚石衬底上。通过 X 射线衍射 (XRD) 表征,观察到高氮杂金刚石衬底上的 AlN 得到了增强。此外,掺入 N 的金刚石上的 GaN 形貌大大增强,显示出卓越的薄膜质量,拉曼光谱和光致发光光谱进一步证实了这一点。值得注意的是,高分辨率 XRD 表征揭示了氮结合金刚石衬底上 GaN 薄膜更窄的摇摆曲线,半最大值全宽为 2714 弧秒,而无氮金刚石衬底上的全宽为 7560 弧秒。总之,利用掺入 N 的金刚石衬底是在金刚石上沉积 GaN 的一种实用方法。
期刊介绍:
Materials Letters has an open access mirror journal Materials Letters: X, sharing the same aims and scope, editorial team, submission system and rigorous peer review.
Materials Letters is dedicated to publishing novel, cutting edge reports of broad interest to the materials community. The journal provides a forum for materials scientists and engineers, physicists, and chemists to rapidly communicate on the most important topics in the field of materials.
Contributions include, but are not limited to, a variety of topics such as:
• Materials - Metals and alloys, amorphous solids, ceramics, composites, polymers, semiconductors
• Applications - Structural, opto-electronic, magnetic, medical, MEMS, sensors, smart
• Characterization - Analytical, microscopy, scanning probes, nanoscopic, optical, electrical, magnetic, acoustic, spectroscopic, diffraction
• Novel Materials - Micro and nanostructures (nanowires, nanotubes, nanoparticles), nanocomposites, thin films, superlattices, quantum dots.
• Processing - Crystal growth, thin film processing, sol-gel processing, mechanical processing, assembly, nanocrystalline processing.
• Properties - Mechanical, magnetic, optical, electrical, ferroelectric, thermal, interfacial, transport, thermodynamic
• Synthesis - Quenching, solid state, solidification, solution synthesis, vapor deposition, high pressure, explosive