Effect of vagus nerve stimulation on emergency department utilization in children with drug-resistant epilepsy: a retrospective cohort study.

IF 2.1 3区 医学 Q3 CLINICAL NEUROLOGY
Journal of neurosurgery. Pediatrics Pub Date : 2024-06-21 Print Date: 2024-09-01 DOI:10.3171/2024.4.PEDS23310
Nallammai Muthiah, Hope M Reecher, Taylor J Abel
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引用次数: 0

Abstract

Objective: Epilepsy affects approximately 470,000 children in the United States. The estimated median incidence is 50.4 cases per 100,000 persons per year. There are approximately 3.1 million seizure-related emergency department (ED) visits per year among children. Vagus nerve stimulation (VNS) is a treatment option for drug-resistant epilepsy (DRE). While its primary goal is to decrease seizure burden, VNS may decrease seizure intensity and improve quality of life. The authors assessed whether VNS decreased the number of seizure-related ED visits in a cohort of children with DRE.

Methods: The authors performed a retrospective chart review of pediatric patients (aged 0-21 years) who underwent implantation of a vagus nerve stimulator between January 2009 and January 2020 at the University of Pittsburgh Medical Center Children's Hospital of Pittsburgh. They used paired t-tests to assess differences in the number of ED visits 2 years before versus 2 years after VNS device implantation. Univariable linear regression analyses were used to test associations of preoperative characteristics with change in the number of ED visits following vagus nerve stimulator insertion.

Results: This study included 240 patients. Compared with patients without seizure-related ED visits before VNS, patients with ≥ 1 ED visits were younger in age at first VNS surgery (9.5 vs 10.8 years), had a shorter epilepsy duration before VNS surgery (5.8 vs 7.4 years), had a later year of device implantation (2014 vs 2012), and on average took more antiseizure medications (ASMs; 2.4 vs 2.1). There was no significant difference between the total number of seizure-related ED visits pre- versus post-VNS surgery (1.72 vs 1.59, p = 0.50), and no difference in status epilepticus-related visits (0.59 vs 0.46, p = 0.17). Univariable linear regression analyses revealed a mean change in ED visits of +0.3 for each year prior to 2022 and -0.5 for each additional ASM that patients took before vagus nerve stimulator insertion.

Conclusions: This single-institution analysis demonstrated no significant change in the number of seizure-related ED visits within 2 years following VNS device implantation. Earlier VNS surgery was associated with more seizure-related ED visits after device insertion, suggesting that medical management and center experience may play a role in decreasing seizure-related ED visits. A greater number of ASMs was associated with fewer seizure-related ED visits after VNS device insertion, suggesting the role of medical management, patient baseline seizure threshold, and caregiver comfort with at-home seizure management.

迷走神经刺激对耐药癫痫患儿使用急诊室的影响:一项回顾性队列研究。
目的:美国约有 47 万名儿童患有癫痫。估计发病率中位数为每年每 10 万人中有 50.4 例。每年约有 310 万名儿童因癫痫发作到急诊科(ED)就诊。迷走神经刺激(VNS)是治疗耐药性癫痫(DRE)的一种方法。虽然 VNS 的主要目标是减少癫痫发作负担,但它也可以降低癫痫发作强度并改善生活质量。作者评估了 VNS 是否减少了一组 DRE 儿童中与癫痫发作相关的急诊就诊次数:作者对 2009 年 1 月至 2020 年 1 月期间在匹兹堡大学医疗中心儿童医院接受迷走神经刺激器植入手术的儿科患者(0-21 岁)进行了回顾性病历审查。他们使用配对 t 检验来评估 VNS 装置植入前 2 年与植入后 2 年 ED 就诊次数的差异。他们还使用单变量线性回归分析来检验术前特征与植入迷走神经刺激器后ED就诊次数变化的相关性:本研究共纳入 240 名患者。与 VNS 术前没有发作相关 ED 就诊的患者相比,ED 就诊次数≥1 次的患者首次接受 VNS 手术时的年龄较小(9.5 岁对 10.8 岁),VNS 手术前的癫痫持续时间较短(5.8 年对 7.4 年),设备植入年份较晚(2014 年对 2012 年),平均服用抗癫痫药物(ASMs;2.4 种对 2.1 种)的次数较多。VNS手术前后与癫痫发作相关的急诊就诊总次数无明显差异(1.72 vs 1.59,p = 0.50),与癫痫状态相关的就诊次数也无差异(0.59 vs 0.46,p = 0.17)。单变量线性回归分析显示,2022年之前每增加一年,ED就诊次数的平均变化为+0.3,患者在植入迷走神经刺激器之前每增加一次ASM,ED就诊次数的平均变化为-0.5:这项单一机构分析显示,在植入 VNS 装置后的两年内,与癫痫发作相关的急诊就诊次数没有明显变化。较早的 VNS 手术与设备植入后较多的癫痫发作相关急诊就诊有关,这表明医疗管理和中心经验可能在减少癫痫发作相关急诊就诊方面发挥作用。更多的 ASM 与 VNS 装置植入后更少的癫痫发作相关急诊就诊相关联,这表明医疗管理、患者基线癫痫发作阈值和护理人员对居家癫痫发作管理的舒适度发挥了作用。
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来源期刊
Journal of neurosurgery. Pediatrics
Journal of neurosurgery. Pediatrics 医学-临床神经学
CiteScore
3.40
自引率
10.50%
发文量
307
审稿时长
2 months
期刊介绍: Information not localiced
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