Sensitivity, linearity, and noise evaluation of L-shaped dielectrically modulated label free tunnel field-effect transistor biosensor

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-06-17 DOI:10.1002/jnm.3262

Sruti Suvadarsini Singh, Prasanna Kumar Sahu

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引用次数: 0

Abstract

This research article examines a L-shaped dielectrically modulated label free TFET (L-DM-TFET) biosensor for the purpose of detecting different biomolecules using a label-free biosensing detection technique. The proposed structure allows for the recognition of biomolecules by modulating various electrical properties, such as the drain current, transconductance, and linearity parameters. The source region of the proposed TFET incorporates a SiGe (source)/Si (channel) heterojunction, utilizing a low bandgap material of SiGe. This heterojunction is employed to enhance the ON-state current of the devices. The materials used and the fabrication steps involved in our proposed device are compatible with complementary metal-oxide-semiconductor (CMOS) technology. This analysis is conducted using a calibrated Silvaco technology computer-aided design (TCAD) simulator. Additionally, by considering a dielectric constant range of 1–12, we calculate various figure of merits (FOMs) parameters for the device. These include evaluation of linearity, sensitivity, and noise characteristics. Furthermore, we have conducted an analysis of linearity FOMs, such as VIP2, VIP3, IIP3, and IMD3 for the proposed device under study. Additionally, the linearity analysis of the presented tunneling FET (TFET) indicates the device's excellent performance in distortionless switching operations. Consequently, the L-shaped dielectrically modulated biosensor holds potential suitability for high-speed circuit designs.

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L 型介质调制无标记隧道场效应晶体管生物传感器的灵敏度、线性度和噪声评估

本文研究了一种 L 型介电调制无标记 TFET（L-DM-TFET）生物传感器，目的是利用无标记生物传感检测技术检测不同的生物分子。所提出的结构可通过调制各种电特性（如漏极电流、跨导和线性参数）来识别生物分子。拟议 TFET 的源区采用了硅锗（源）/硅（沟道）异质结，利用了硅锗的低带隙材料。采用这种异质结可以增强器件的导通电流。我们提出的器件所使用的材料和制造步骤与互补金属氧化物半导体（CMOS）技术兼容。这项分析是使用经过校准的 Silvaco 技术计算机辅助设计 (TCAD) 模拟器进行的。此外，考虑到介电常数范围为 1-12，我们还计算了该器件的各种优点参数（FOMs）。这些参数包括线性度、灵敏度和噪声特性的评估。此外，我们还对所研究的拟议器件进行了线性度 FOMs 分析，如 VIP2、VIP3、IIP3 和 IMD3。此外，对所提出的隧道式场效应晶体管（TFET）进行的线性度分析表明，该器件在无失真开关操作中表现出色。因此，L 型介质调制生物传感器在高速电路设计中具有潜在的适用性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

International Journal of Numerical Modelling-Electronic Networks Devices and Fields 工程技术-工程：电子与电气

CiteScore

4.60

自引率

6.20%

发文量

101

审稿时长

>12 weeks

期刊介绍： Prediction through modelling forms the basis of engineering design. The computational power at the fingertips of the professional engineer is increasing enormously and techniques for computer simulation are changing rapidly. Engineers need models which relate to their design area and which are adaptable to new design concepts. They also need efficient and friendly ways of presenting, viewing and transmitting the data associated with their models. The International Journal of Numerical Modelling: Electronic Networks, Devices and Fields provides a communication vehicle for numerical modelling methods and data preparation methods associated with electrical and electronic circuits and fields. It concentrates on numerical modelling rather than abstract numerical mathematics. Contributions on numerical modelling will cover the entire subject of electrical and electronic engineering. They will range from electrical distribution networks to integrated circuits on VLSI design, and from static electric and magnetic fields through microwaves to optical design. They will also include the use of electrical networks as a modelling medium.