{"title":"Numerical modelling of melting front structures during floating zone silicon crystal growth","authors":"Maksims Surovovs , Maija Sjomkane , Janis Virbulis , Gundars Ratnieks","doi":"10.1016/j.jcrysgro.2024.127788","DOIUrl":null,"url":null,"abstract":"<div><p>We propose a mathematical model of the thin molten silicon film to describe the quasi-steady shape of the inhomogeneous structures on the open melting front of polycrystalline feed rod during the floating zone process for single crystal silicon growth. As a result, precise shapes of the phase boundaries in a three-phase environment on a local scale were determined with the use of moving meshes. The presence of the local structures influences the heat transfer on the open melting front. Consequently, the global phase boundary model can be adjusted, resulting in improved agreement with the experimentally measured interface shape.</p></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":null,"pages":null},"PeriodicalIF":1.7000,"publicationDate":"2024-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Crystal Growth","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0022024824002239","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}
引用次数: 0
Abstract
We propose a mathematical model of the thin molten silicon film to describe the quasi-steady shape of the inhomogeneous structures on the open melting front of polycrystalline feed rod during the floating zone process for single crystal silicon growth. As a result, precise shapes of the phase boundaries in a three-phase environment on a local scale were determined with the use of moving meshes. The presence of the local structures influences the heat transfer on the open melting front. Consequently, the global phase boundary model can be adjusted, resulting in improved agreement with the experimentally measured interface shape.
期刊介绍:
The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.