Numerical modelling of melting front structures during floating zone silicon crystal growth

IF 1.7 4区 材料科学 Q3 CRYSTALLOGRAPHY
Maksims Surovovs , Maija Sjomkane , Janis Virbulis , Gundars Ratnieks
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引用次数: 0

Abstract

We propose a mathematical model of the thin molten silicon film to describe the quasi-steady shape of the inhomogeneous structures on the open melting front of polycrystalline feed rod during the floating zone process for single crystal silicon growth. As a result, precise shapes of the phase boundaries in a three-phase environment on a local scale were determined with the use of moving meshes. The presence of the local structures influences the heat transfer on the open melting front. Consequently, the global phase boundary model can be adjusted, resulting in improved agreement with the experimentally measured interface shape.

浮动区硅晶体生长过程中熔融前沿结构的数值模拟
我们提出了一种熔融硅薄膜数学模型,用于描述单晶硅生长浮区过程中多晶进料棒开放式熔化前沿上不均匀结构的准稳定形状。因此,利用移动网格确定了三相环境中相界在局部尺度上的精确形状。局部结构的存在会影响开放熔化前沿的传热。因此,可以调整全局相边界模型,从而提高与实验测量界面形状的一致性。
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来源期刊
Journal of Crystal Growth
Journal of Crystal Growth 化学-晶体学
CiteScore
3.60
自引率
11.10%
发文量
373
审稿时长
65 days
期刊介绍: The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.
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