24.2% efficient POLO back junction solar cell with an AlOx/SiNy dielectric stack from an industrial-scale direct plasma-enhanced chemical vapor deposition system

IF 8 2区 材料科学 Q1 ENERGY & FUELS
Byungsul Min, Verena Mertens, Yevgeniya Larionova, Thomas Pernau, Helge Haverkamp, Thorsten Dullweber, Robby Peibst, Rolf Brendel
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Abstract

An aluminum oxide (AlOx)/silicon nitride (SiNy) dielectric stack was developed using an industrial plasma-enhanced chemical vapor deposition (PECVD) system with low-frequency (LF) plasma source for the surface passivation of undiffused textured p-type crystalline silicon. The median recombination current density is 4.3 fA cm−2 as determined from photoconductance decay lifetime measurements and numerical device modeling. To the best of our knowledge, this is the first time to present a high-quality LF-PECVD AlOx/SiNy passivation stack on undiffused textured p-type crystalline silicon wafers, which are cleaned with industrial processes using HF, HCl, and O3. The simulation agrees well with the measured effective carrier lifetime if the velocity parameters of 5.6 cm s−1 for holes and 803 cm s−1 for electrons are applied with a fixed negative charge density of −3 × 1012 cm−2. The process integration of developed AlOx/SiNy dielectric stack is successfully demonstrated by fabricating p-type back junction solar cells featuring a poly-Si-based passivating contact at the cell rear side. As the best cell efficiency, we achieve 24.2% with an open-circuit voltage of 725 mV on a M2-sized Ga-doped p-type Czochralski-grown Si wafer as independently confirmed by ISFH CalTeC.

Abstract Image

Abstract Image

采用工业规模直接等离子体增强化学气相沉积系统生产的 AlOx/SiNy 介电堆栈的 24.2% 高效率 POLO 背结太阳能电池
利用带有低频(LF)等离子源的工业等离子体增强化学气相沉积(PECVD)系统,开发了一种氧化铝(AlOx)/氮化硅(SiNy)介质堆,用于未扩散纹理对型晶体硅的表面钝化。通过光电导衰减寿命测量和数值器件建模确定的中值重组电流密度为 4.3 fA cm-2。据我们所知,这是首次在未扩散纹理的 p 型晶体硅晶片上实现高质量的 LF-PECVD AlOx/SiNy 钝化堆栈,这些晶片是通过使用 HF、HCl 和 O3 的工业流程进行清洁的。如果采用 5.6 cm s-1 的空穴速度参数和 803 cm s-1 的电子速度参数,并固定负电荷密度为 -3 × 1012 cm-2,模拟结果与测量的有效载流子寿命非常吻合。通过在电池后侧制造具有聚硅氧烷钝化触点的 p 型背结太阳能电池,成功演示了所开发的 AlOx/SiNy 介电堆栈的工艺集成。经 ISFH CalTeC 独立确认,我们在 M2 大小的掺镓 p 型 Czochralski 生长硅晶片上实现了 24.2% 的最佳电池效率,开路电压为 725 mV。
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来源期刊
Progress in Photovoltaics
Progress in Photovoltaics 工程技术-能源与燃料
CiteScore
18.10
自引率
7.50%
发文量
130
审稿时长
5.4 months
期刊介绍: Progress in Photovoltaics offers a prestigious forum for reporting advances in this rapidly developing technology, aiming to reach all interested professionals, researchers and energy policy-makers. The key criterion is that all papers submitted should report substantial “progress” in photovoltaics. Papers are encouraged that report substantial “progress” such as gains in independently certified solar cell efficiency, eligible for a new entry in the journal''s widely referenced Solar Cell Efficiency Tables. Examples of papers that will not be considered for publication are those that report development in materials without relation to data on cell performance, routine analysis, characterisation or modelling of cells or processing sequences, routine reports of system performance, improvements in electronic hardware design, or country programs, although invited papers may occasionally be solicited in these areas to capture accumulated “progress”.
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