Electron Energy-Loss Spectroscopy Method for Thin-Film Thickness Calculations with a Low Incident Energy Electron Beam

A. M. Jaber, Ammar Alsoud, Saleh R Al-Bashaish, Hmoud Al Dmour, Marwan S. Mousa, T. Trčka, V. Holcman, D. Sobola
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Abstract

In this study, the thickness of a thin film (tc) at a low primary electron energy of less than or equal to 10 keV was calculated using electron energy-loss spectroscopy. This method uses the ratio of the intensity of the transmitted background spectrum to the intensity of the transmission electrons with zero-loss energy (elastic) in the presence of an accurate average inelastic free path length (λ). The Monte Carlo model was used to simulate the interaction between the electron beam and the tested thin films. The total background of the transmitted electrons is considered to be the electron transmitting the film with an energy above 50 eV to eliminate the effect of the secondary electrons. The method was used at low primary electron energy to measure the thickness (t) of C, Si, Cr, Cu, Ag, and Au films below 12 nm. For the C and Si films, the accuracy of the thickness calculation increased as the energy of the primary electrons and thickness of the film increased. However, for heavy elements, the accuracy of the film thickness calculations increased as the primary electron energy increased and the film thickness decreased. High accuracy (with 2% uncertainty) in the measurement of C and Si thin films was observed at large thicknesses and 10 keV, where . However, in the case of heavy-element films, the highest accuracy (with an uncertainty below 8%) was found for thin thicknesses and 10 keV, where . The present results show that an accurate film thickness measurement can be obtained at primary electron energy equal to or less than 10 keV and a ratio of . This method demonstrates the potential of low-loss electron energy-loss spectroscopy in transmission electron microscopy as a fast and straightforward method for determining the thin-film thickness of the material under investigation at low primary electron energies.
利用低入射能量电子束计算薄膜厚度的电子能量损失光谱法
在这项研究中,使用电子能量损失光谱法计算了在小于或等于 10 keV 的低初级电子能量下的薄膜厚度 (tc)。这种方法使用的是在精确的平均非弹性自由路径长度(λ)存在的情况下,透射背景光谱强度与零损耗能量(弹性)透射电子强度之比。蒙特卡罗模型用于模拟电子束与被测薄膜之间的相互作用。透射电子的总背景被认为是透射薄膜的能量高于50 eV的电子,以消除次级电子的影响。该方法用于在低初级电子能量下测量 12 nm 以下的 C、Si、Cr、Cu、Ag 和 Au 薄膜的厚度 (t)。对于 C 和 Si 薄膜,厚度计算的精确度随着原生电子能量和薄膜厚度的增加而提高。然而,对于重元素,薄膜厚度计算的精确度随着原初电子能量的增加和薄膜厚度的减小而增加。在大厚度和 10 keV 时,C 和 Si 薄膜的测量精度较高(不确定度为 2%),其中 .然而,在重元素薄膜的测量中,厚度较薄和 10 keV 时的精度最高(不确定度低于 8%),其中 .本研究结果表明,在原初电子能量等于或小于 10 keV 和比值为.的条件下,可以获得精确的薄膜厚度测量结果。 这种方法证明了透射电子显微镜中的低损耗电子能量损失光谱法的潜力,它是一种在低原初电子能量条件下快速、直接测定被测材料薄膜厚度的方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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