Potential of TiO2 as a capping layer for industrial c-Si PERC solar cells

IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Aamenah Siddiqui, Muhammad Usman, Anders Hallén
{"title":"Potential of TiO2 as a capping layer for industrial c-Si PERC solar cells","authors":"Aamenah Siddiqui,&nbsp;Muhammad Usman,&nbsp;Anders Hallén","doi":"10.1007/s10825-024-02187-0","DOIUrl":null,"url":null,"abstract":"<div><p>Titanium dioxide (TiO<sub>2</sub>) has gained popularity especially in photovoltaic applications, owing to its transparency in the visible region, and scratch resistance. In this work, the potential of TiO<sub>2</sub> as a capping layer for c-Si p-type SiN<sub><i>x</i></sub> passivated emitter and rear contact (PERC) solar cells is studied through extensive optical and device simulations. The bifacial PERC solar cell model used in this study is calibrated with an experimental device having an efficiency of 22.19%. Device simulation results show that TiO<sub>2</sub> deposited by the mesoporous technique outperforms atmospheric pressure chemical vapor deposition (APCVD) and atomic layer deposition (ALD)-based TiO<sub>2</sub> layers when capped over SiN<sub><i>x</i></sub> (<i>n</i> = 2.1) passivated solar cells. Furthermore, it is shown that the efficiency of SiN<sub><i>x</i></sub> (<i>n</i> = 2.1)/TiO<sub>2</sub> based solar cells is maintained, even when the TiO<sub>2</sub> layer thickness varies from 75 to 95 nm. To enhance the efficiency further, the type of SiN<sub><i>x</i></sub> layer (characterized by the <i>n</i> value), and the thicknesses of SiN<sub><i>x</i></sub> and TiO<sub>2</sub> layers are optimized simultaneously to find the best combination of these parameters. The best front side solar cell efficiency of 22.43%, is obtained when a stack of SiN<sub><i>x</i></sub>(<i>n</i> = 1.99)/TiO<sub>2</sub> (<i>t</i> = 58/76 nm) is used. Similarly, a rear side efficiency of 16.59% is achieved when the rear side Al<sub>2</sub>O<sub>3</sub>/SiN<sub><i>x</i></sub> stack is capped with mesoporous TiO<sub>2</sub>. These efficiencies are 0.24 and 1.25% higher, respectively, when compared to the original SiN<sub><i>x</i></sub> passivated PERC solar cell, demonstrating the prospective of using TiO<sub>2</sub> in encapsulant-free commercial photovoltaic applications.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 4","pages":"874 - 883"},"PeriodicalIF":2.2000,"publicationDate":"2024-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Computational Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10825-024-02187-0","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

Titanium dioxide (TiO2) has gained popularity especially in photovoltaic applications, owing to its transparency in the visible region, and scratch resistance. In this work, the potential of TiO2 as a capping layer for c-Si p-type SiNx passivated emitter and rear contact (PERC) solar cells is studied through extensive optical and device simulations. The bifacial PERC solar cell model used in this study is calibrated with an experimental device having an efficiency of 22.19%. Device simulation results show that TiO2 deposited by the mesoporous technique outperforms atmospheric pressure chemical vapor deposition (APCVD) and atomic layer deposition (ALD)-based TiO2 layers when capped over SiNx (n = 2.1) passivated solar cells. Furthermore, it is shown that the efficiency of SiNx (n = 2.1)/TiO2 based solar cells is maintained, even when the TiO2 layer thickness varies from 75 to 95 nm. To enhance the efficiency further, the type of SiNx layer (characterized by the n value), and the thicknesses of SiNx and TiO2 layers are optimized simultaneously to find the best combination of these parameters. The best front side solar cell efficiency of 22.43%, is obtained when a stack of SiNx(n = 1.99)/TiO2 (t = 58/76 nm) is used. Similarly, a rear side efficiency of 16.59% is achieved when the rear side Al2O3/SiNx stack is capped with mesoporous TiO2. These efficiencies are 0.24 and 1.25% higher, respectively, when compared to the original SiNx passivated PERC solar cell, demonstrating the prospective of using TiO2 in encapsulant-free commercial photovoltaic applications.

Abstract Image

Abstract Image

二氧化钛作为工业化晶体硅 PERC 太阳能电池封盖层的潜力
二氧化钛(TiO2)因其在可见光区域的透明度和抗划伤性,在光伏应用中尤其受到青睐。在这项研究中,通过大量的光学和器件模拟,研究了二氧化钛作为晶体硅 p 型氮化硅钝化发射极和后触点(PERC)太阳能电池的封盖层的潜力。本研究中使用的双面 PERC 太阳能电池模型通过效率为 22.19% 的实验装置进行了校准。器件模拟结果表明,当在钝化的 SiNx(n = 2.1)太阳能电池上盖上基于介孔技术沉积的 TiO2 层时,其性能优于基于大气压化学气相沉积(APCVD)和原子层沉积(ALD)的 TiO2 层。此外,研究还表明,即使 TiO2 层的厚度在 75 至 95 nm 之间变化,基于 SiNx(n = 2.1)/TiO2 的太阳能电池的效率也能保持不变。为了进一步提高效率,我们同时对氮化硅层的类型(以 n 值为特征)、氮化硅层和二氧化钛层的厚度进行了优化,以找到这些参数的最佳组合。当使用 SiNx(n = 1.99)/TiO2(t = 58/76 nm)叠层时,太阳能电池的正面效率达到 22.43%。同样,当背面 Al2O3/SiNx 叠层被介孔 TiO2 封盖时,背面效率为 16.59%。与原始的 SiNx 钝化 PERC 太阳能电池相比,这些效率分别提高了 0.24% 和 1.25%,这表明 TiO2 在无封装商用光伏应用中的前景广阔。
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来源期刊
Journal of Computational Electronics
Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED
CiteScore
4.50
自引率
4.80%
发文量
142
审稿时长
>12 weeks
期刊介绍: he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.
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