Simulation of 2D ReS2/WSe2 based complementary field-effect transistors towards 1 nm technology node

Abstract

Advanced Integrated Circuit technology demands high-performance channel materials and innovative device architectures to sustain the scaling of field-effect transistors. In this study, we simulate the electrical performance of rhenium disulfide and tungsten diselenide nanosheet FETs (NSFETs) with gate lengths ranging from 12 nm to 8 nm using Technology Computer-Aided Design method. The simulated high performance including 393 μA/μm on-state current and over 10⁵ on/off ratio can meet the criteria for integrated circuit applications in the 1 nm technology node. Complementary FET (CFET) simulations are conducted through the vertical stacking of ReS₂ and WSe₂ NSFETs, exhibiting a small parasitic capacitance of 1.0 fF/μm, and notable noise margin (>235 mV) at different process corners. The construction and performance simulation of Static Random-Access Memory (SRAM) is realized through CFET interconnection, involving the calculation of read current and read/write noise margin. This research offers a forward-looking analysis of performance metrics for future 2D materials-based NSFETs, CFETs, and SRAMs.