Trade-off effect of hydrogen-bonded dopant-free hole transport materials on performance of inverted perovskite solar cells

IF 16.8 1区 材料科学 Q1 CHEMISTRY, PHYSICAL
Zheng Wang , Jiakang Zhang , Sunardi Rahman , Sri Kasi Matta , Mrinal Kanti Si , Zhenhao Zhang , Muhua Zou , Hongzhen Wang , Salvy P. Russo , Zhongmin Zhou , Haichang Zhang , Maning Liu
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Abstract

Benefiting from their ordered orientation and superior stability compared to traditional conjugated materials, hydrogen bonding (HB)-induced H-aggregates in organic small molecule hole-transport materials (HTMs) hold a big potential for high-performance inverted perovskite solar cells (IPSCs). However, H-aggregates can also lead to excessive face-aggregation by forming the gaps between aggregates, which is in turn unfavorable for charge mobility and thus for the overall device performance. Herein, we design and synthesize a new set of HB-containing triphenylamine-based small molecules to tailor the degree of H-aggregation, namely O1 (without HB), O2 (unilateral HB unit), and O3 (bilateral HB units). These HTMs make a clear trade-off effect on the charge mobility within the HTM and the interfacial properties of perovskite and HTM. Although the interfacial hole extraction process is promoted upon the HB-functionalized interface, the best performance of IPSCs is still achieved by O1 HTM, which is mainly influenced by the higher hole mobility without HB-induced H-aggregates. Nevertheless, the photo stability of as-fabricated devices is effectively improved upon the HB passivation effect on the interface of HTM (O2 or O3) and perovskite, as well as the better quality of atop perovskite layers with less grain boundary compared to the reference case (O1).

Abstract Image

氢键无掺杂空穴传输材料对倒置过氧化物太阳能电池性能的权衡效应
与传统的共轭材料相比,有机小分子空穴传输材料(HTMs)中的氢键(HB)诱导的氢聚合体具有有序的取向和卓越的稳定性,因此在高性能倒置包光体太阳能电池(IPSCs)中大有可为。然而,H-聚集体也会通过形成聚集体之间的间隙而导致过度的面聚集,这反过来又不利于电荷迁移率,从而影响整个器件的性能。在此,我们设计并合成了一组新的含 HB 的三苯胺基小分子,即 O1(不含 HB)、O2(单侧 HB 单元)和 O3(双侧 HB 单元),以定制 H-聚集程度。这些 HTM 对 HTM 内部的电荷迁移率以及包晶和 HTM 的界面特性具有明显的权衡作用。虽然 HB 功能化界面促进了界面空穴萃取过程,但 O1 HTM 仍然实现了 IPSC 的最佳性能,这主要是受到没有 HB 诱导的 H 聚结的较高空穴迁移率的影响。尽管如此,由于 HTM(O2 或 O3)和包晶石界面上的 HB 钝化效应,以及与参考情况(O1)相比晶界更少的包晶石层顶端质量更好,因此制备器件的光稳定性得到了有效改善。
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来源期刊
Nano Energy
Nano Energy CHEMISTRY, PHYSICAL-NANOSCIENCE & NANOTECHNOLOGY
CiteScore
30.30
自引率
7.40%
发文量
1207
审稿时长
23 days
期刊介绍: Nano Energy is a multidisciplinary, rapid-publication forum of original peer-reviewed contributions on the science and engineering of nanomaterials and nanodevices used in all forms of energy harvesting, conversion, storage, utilization and policy. Through its mixture of articles, reviews, communications, research news, and information on key developments, Nano Energy provides a comprehensive coverage of this exciting and dynamic field which joins nanoscience and nanotechnology with energy science. The journal is relevant to all those who are interested in nanomaterials solutions to the energy problem. Nano Energy publishes original experimental and theoretical research on all aspects of energy-related research which utilizes nanomaterials and nanotechnology. Manuscripts of four types are considered: review articles which inform readers of the latest research and advances in energy science; rapid communications which feature exciting research breakthroughs in the field; full-length articles which report comprehensive research developments; and news and opinions which comment on topical issues or express views on the developments in related fields.
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