Low-Noise Power-Amplifier MMICs for the WR4.3 and WR3.4 Bands in a 35-nm Gate-Length InGaAs mHEMT Technology

0 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE microwave and wireless technology letters Pub Date : 2024-04-19 DOI:10.1109/LMWT.2024.3388320

Fabian Thome;Arnulf Leuther

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引用次数: 0

Abstract

This letter presents two distributed low-noise power-amplifier (LNPA) monolithic microwave integrated circuits (MMICs). The two amplifiers (DA1 and DA2) target the WR4.3 (170–260 GHz) and WR3.4 bands (220–330 GHz) as a minimum operating bandwidth (BW). The MMICs are realized in the Fraunhofer IAF 35-nm InGaAs mHEMT technology. Both amplifiers yield a small-signal gain of more than 20 dB from 110 GHz up to the corresponding upper band edges (265 and 335 GHz) and an average noise figure (NF) of 4.5 dB (110–216 GHz). Furthermore, DA1 delivers a saturated output power (

${P}_{\mathrm{ sat}}$

) of 12.4–15.2 dBm with a power-added efficiency (PAE) of 3.4%–6.2% (160–255 GHz). DA2 exhibits a

${P}_{\mathrm{ sat}}$

of 10–14.5 dBm (210–335 GHz). To the best of the authors’ knowledge, DA1 and DA2 present the best NF and

${P}_{\mathrm{ sat}}$

over the full WR4.3 and WR3.4 bands, respectively.

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采用 35 纳米栅长 InGaAs mHEMT 技术的 WR4.3 和 WR3.4 波段低噪声功率放大器 MMIC

本文介绍了两款分布式低噪声功率放大器（LNPA）单片微波集成电路（MMIC）。这两个放大器（DA1 和 DA2）以 WR4.3 波段（170-260 GHz）和 WR3.4 波段（220-330 GHz）为最小工作带宽 (BW)。MMIC 采用 Fraunhofer IAF 35 纳米 InGaAs mHEMT 技术实现。从 110 GHz 到相应的上频带边缘（265 和 335 GHz），两个放大器的小信号增益均超过 20 dB，平均噪声系数 (NF) 为 4.5 dB（110-216 GHz）。此外，DA1 的饱和输出功率（${P}_{\mathrm{ sat}}$）为 12.4-15.2 dBm，功率附加效率（PAE）为 3.4%-6.2%（160-255 GHz）。DA2 的 ${P}_{mathrm{ sat}}$ 为 10-14.5 dBm（210-335 GHz）。据作者所知，DA1 和 DA2 分别在整个 WR4.3 和 WR3.4 波段上实现了最佳 NF 和 ${P}_{mathrm{sat}$。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE microwave and wireless technology letters

CiteScore

6.00

自引率

0.00%

发文量