A 194-GHz Three-Stage Differential Driver Amplifier Utilizing a Three-Element Embedded Core at Near-fmax Frequencies in 65-Nm CMOS

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IEEE microwave and wireless technology letters Pub Date : 2024-04-12 DOI:10.1109/LMWT.2024.3384700

Fei He;Qian Xie;Zheng Wang

引用次数: 0

Abstract

In this letter, we introduce a 194-GHz three-stage differential driver amplifier operating at near-

$f_{\mathrm {max}}$

frequencies. To address practical considerations associated with implementing ON-chip embedding elements within the sub-THz frequency range, we employ a three-element embedded core consisting of three types of embedding networks. This design approach offers greater flexibility in selecting the required embedding elements. Based on the proposed embedded core, a three-stage drive amplifier is implemented in the 65-nm CMOS process. The measurement results indicate that the proposed amplifier exhibits a small signal gain of 20.4 dB, a

$P_{\mathrm {sat}}$

of −2.1 dBm, and a peak PAE of 2.2% at 194 GHz.

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利用三元件嵌入式内核的 194-GHz 三级差分驱动器放大器，采用 65-Nm CMOS，频率接近最大值

在这封信中，我们介绍了一种在接近 $f_{\mathrm {max}}$ 频率下工作的 194-GHz 三级差分驱动放大器。为了解决在亚 THz 频率范围内实施片上嵌入元件的相关实际问题，我们采用了由三种类型的嵌入网络组成的三元件嵌入式内核。这种设计方法为选择所需的嵌入元件提供了更大的灵活性。基于所提出的嵌入式内核，我们在 65 纳米 CMOS 工艺中实现了一个三级驱动放大器。测量结果表明，所提出的放大器在 194 GHz 时的小信号增益为 20.4 dB，$P_{\mathrm {sat}}$ 为 -2.1 dBm，峰值 PAE 为 2.2%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE microwave and wireless technology letters

CiteScore

6.00

自引率

0.00%

发文量