M. Aldrigo;M. Dragoman;A. Dinescu;D. Vasilache;S. Iordanescu;L. A. Dinu;D. Dragoman;E. Laudadio;E. Pavoni;L. Pierantoni;D. Mencarelli
{"title":"Demonstration of Microwave Harvesting Through Pyroelectricity in Cryogenic Conditions: A Quantum-to-Experimental Approach","authors":"M. Aldrigo;M. Dragoman;A. Dinescu;D. Vasilache;S. Iordanescu;L. A. Dinu;D. Dragoman;E. Laudadio;E. Pavoni;L. Pierantoni;D. Mencarelli","doi":"10.1109/LMWT.2024.3391214","DOIUrl":null,"url":null,"abstract":"In this letter, we present a comprehensive study of a planar field effect transistor (FET) with a graphene/ferroelectric channel on high-resistivity silicon substrate, able to convert the incident microwave power into a pyroelectric voltage in cryogenic conditions down to 100 K. The FET is based on a graphene monolayer/zirconium-doped hafnium oxide (HZO) heterostructure, being the graphene perforated with a matrix of nanoholes. This choice has two aims: 1) to create a bandgap in the graphene monolayer and 2) to reduce graphene’s thermal conductivity, thereby promoting the generation of a pyroelectric current. Starting from quantum simulations to assess the electrical behavior of the channel, we measured in a cryogenic setup a maximum detected pyroelectric voltage of about 18 mV at 2 GHz and at 100 K. Moreover, the detected transient pulses fit in to solitons, which are typical for thin film ferroelectrics.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2024-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE microwave and wireless technology letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10508958/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"0","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
In this letter, we present a comprehensive study of a planar field effect transistor (FET) with a graphene/ferroelectric channel on high-resistivity silicon substrate, able to convert the incident microwave power into a pyroelectric voltage in cryogenic conditions down to 100 K. The FET is based on a graphene monolayer/zirconium-doped hafnium oxide (HZO) heterostructure, being the graphene perforated with a matrix of nanoholes. This choice has two aims: 1) to create a bandgap in the graphene monolayer and 2) to reduce graphene’s thermal conductivity, thereby promoting the generation of a pyroelectric current. Starting from quantum simulations to assess the electrical behavior of the channel, we measured in a cryogenic setup a maximum detected pyroelectric voltage of about 18 mV at 2 GHz and at 100 K. Moreover, the detected transient pulses fit in to solitons, which are typical for thin film ferroelectrics.