Menghan Deng , Zhaotan Gao , Lin Wang , Zhangchen Hou , Xionghu Xu , Li Chen , Anyang Cui , Kai Jiang , Liyan Shang , Liangqing Zhu , Yawei Li , Jinzhong Zhang , Zhigao Hu
{"title":"Two-dimensional materials based volatile memristors mediated by flexoelectric effect","authors":"Menghan Deng , Zhaotan Gao , Lin Wang , Zhangchen Hou , Xionghu Xu , Li Chen , Anyang Cui , Kai Jiang , Liyan Shang , Liangqing Zhu , Yawei Li , Jinzhong Zhang , Zhigao Hu","doi":"10.1016/j.nantod.2024.102332","DOIUrl":null,"url":null,"abstract":"<div><p>The study of conventional lateral memristors has been in a slow stage of development due to the dependence of the atomic defect migration or local phase transition in two-dimensional (2D) materials. Here, a novel transversal memristor based on the flexoelectric effect induced by a bent atomic laminated structure is proposed. The memristor exhibits desirable resistive switching performance, including a current ON/OFF ratio of approximately 10<sup>5</sup>, forming-free operation, high yield of 97 %, and low cycle-to-cycle variation of only 7.4 %. The stable analog memristive behavior could be attributed to the dynamic modulation of the barrier between suspended and flat regions by external voltage biases. Further, the volatile resistance switching characteristics have successfully emulated key features of multi-field perceptual artificial nociceptors, including threshold, “no adaptation” etc. This work demonstrates a new resistive switching phenomenon in transversal 2D material devices, and opens a new way for the development of intelligent adaptive artificial sensory systems.</p></div>","PeriodicalId":395,"journal":{"name":"Nano Today","volume":null,"pages":null},"PeriodicalIF":13.2000,"publicationDate":"2024-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nano Today","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1748013224001877","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
The study of conventional lateral memristors has been in a slow stage of development due to the dependence of the atomic defect migration or local phase transition in two-dimensional (2D) materials. Here, a novel transversal memristor based on the flexoelectric effect induced by a bent atomic laminated structure is proposed. The memristor exhibits desirable resistive switching performance, including a current ON/OFF ratio of approximately 105, forming-free operation, high yield of 97 %, and low cycle-to-cycle variation of only 7.4 %. The stable analog memristive behavior could be attributed to the dynamic modulation of the barrier between suspended and flat regions by external voltage biases. Further, the volatile resistance switching characteristics have successfully emulated key features of multi-field perceptual artificial nociceptors, including threshold, “no adaptation” etc. This work demonstrates a new resistive switching phenomenon in transversal 2D material devices, and opens a new way for the development of intelligent adaptive artificial sensory systems.
期刊介绍:
Nano Today is a journal dedicated to publishing influential and innovative work in the field of nanoscience and technology. It covers a wide range of subject areas including biomaterials, materials chemistry, materials science, chemistry, bioengineering, biochemistry, genetics and molecular biology, engineering, and nanotechnology. The journal considers articles that inform readers about the latest research, breakthroughs, and topical issues in these fields. It provides comprehensive coverage through a mixture of peer-reviewed articles, research news, and information on key developments. Nano Today is abstracted and indexed in Science Citation Index, Ei Compendex, Embase, Scopus, and INSPEC.