α-TeO2 Oxide as Transparent p-Type Semiconductor for Low Temperature Processed Thin Film Transistor Devices (Adv. Mater. Interfaces 16/2024)

Abstract

p-Type Semiconductor

P-type oxide semiconducting materials processable at or slightly above room temperature are still rare. Notably, a 5 nm α-TeO₂ thin film represents such an electronically active material and can be gas phase deposited into a thin film transistor device architecture. Nature sometimes creates it as para tellurite polymorph in beautiful single crystals as found in the Bambollita mine, Moctezuma, Sonora, Mexico. More details can be found in article number 2301082 by Jörg J. Schneider and co-workers. Cover image by Dr. S. Okeil. We thank Borja Sainz de Baranda Graf for the image of the crystal.