Investigation of long channel bulk MOSFETs threshold voltage model down to 10 mK and key analog parameters at 4 K

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-06-05 DOI:10.1002/jnm.3258

Hao Su, Yiyuan Cai, Yuhuan Lin, Yunfeng Xie, Yongfeng Mai, Shenghua Zhou, Guangchong Hu, Yu He, Feichi Zhou, Xiaoguang Liu, Longyang Lin, Yida Li, Hongyu Yu, Kai Chen

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引用次数: 0

Abstract

Threshold voltage behavior at cryogenic temperatures is dominated by interface traps. This mechanism leads to different trends of the threshold voltage for NMOS and PMOS toward deep cryogenic temperature. This study investigates threshold voltage (V_th) at cryogenic temperatures down to 10 mK for the first time, based on the recently developed physical charge-based analytical threshold voltage model. To investigate the impact of devices on circuits at low temperatures, crucial MOSFET and analog design parameters, including transconductance (g_m), subthreshold swing (SS), linear region current (I_lin) and g_m/I_DS related parameters are characterized and compared from 300 to 4 K. A Discussion on circuit performance and power consumption has been conducted to provide useful insights for low-temperature CMOS circuit design.

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研究低至 10 mK 的长沟道体 MOSFET 阈值电压模型和 4 K 时的关键模拟参数

低温条件下的阈值电压行为主要受界面陷阱的影响。这种机制导致 NMOS 和 PMOS 的阈值电压在深冷温度下呈现不同的趋势。本研究基于最新开发的基于物理电荷的阈值电压分析模型，首次研究了低温至 10 mK 时的阈值电压 (Vth)。为了研究器件在低温条件下对电路的影响，对关键的 MOSFET 和模拟设计参数，包括跨导 (gm)、亚阈值摆幅 (SS)、线性区电流 (Ilin) 和 gm/IDS 相关参数进行了表征，并对 300 至 4 K 的参数进行了比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

International Journal of Numerical Modelling-Electronic Networks Devices and Fields 工程技术-工程：电子与电气

CiteScore

4.60

自引率

6.20%

发文量

101

审稿时长

>12 weeks

期刊介绍： Prediction through modelling forms the basis of engineering design. The computational power at the fingertips of the professional engineer is increasing enormously and techniques for computer simulation are changing rapidly. Engineers need models which relate to their design area and which are adaptable to new design concepts. They also need efficient and friendly ways of presenting, viewing and transmitting the data associated with their models. The International Journal of Numerical Modelling: Electronic Networks, Devices and Fields provides a communication vehicle for numerical modelling methods and data preparation methods associated with electrical and electronic circuits and fields. It concentrates on numerical modelling rather than abstract numerical mathematics. Contributions on numerical modelling will cover the entire subject of electrical and electronic engineering. They will range from electrical distribution networks to integrated circuits on VLSI design, and from static electric and magnetic fields through microwaves to optical design. They will also include the use of electrical networks as a modelling medium.