L. N. Karelina, N. S. Shuravin, S. V. Egorov, V. V. Bol’ginov, V. V. Ryazanov
{"title":"Magnetic Switching of FSF Bridges at Low Temperatures","authors":"L. N. Karelina, N. S. Shuravin, S. V. Egorov, V. V. Bol’ginov, V. V. Ryazanov","doi":"10.1134/s0021364024600836","DOIUrl":null,"url":null,"abstract":"<p>The voltage–current characteristics of planar Pd<sub>0.99</sub>Fe<sub>0.01</sub>–Nb–Pd<sub>0.99</sub>Fe<sub>0.01</sub> microbridges at temperatures significantly lower than the critical one are studied experimentally. It has been found that a magnetic memory effect, which is manifested in the dependence of the shape of the voltage–current characteristics on the mutual orientation of the magnetizations of the F layers, is observed even at such low temperatures. It has been shown that the studied sample can serve as a magnetic switch with a voltage distinction of more than 600 μV, which corresponds to a characteristic frequency of about 300 GHz if such bridges are used as memory elements in rapid single-flux quantum logic devices. These characteristics are obtained at a temperature of 0.93<i>T</i><sub>c</sub>, which is the minimum operating temperature of the implemented memory element. A low-voltage mode of operation of the sample is discovered, characterized by a wide range of permissible bias currents.</p>","PeriodicalId":604,"journal":{"name":"JETP Letters","volume":null,"pages":null},"PeriodicalIF":1.4000,"publicationDate":"2024-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"JETP Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1134/s0021364024600836","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
The voltage–current characteristics of planar Pd0.99Fe0.01–Nb–Pd0.99Fe0.01 microbridges at temperatures significantly lower than the critical one are studied experimentally. It has been found that a magnetic memory effect, which is manifested in the dependence of the shape of the voltage–current characteristics on the mutual orientation of the magnetizations of the F layers, is observed even at such low temperatures. It has been shown that the studied sample can serve as a magnetic switch with a voltage distinction of more than 600 μV, which corresponds to a characteristic frequency of about 300 GHz if such bridges are used as memory elements in rapid single-flux quantum logic devices. These characteristics are obtained at a temperature of 0.93Tc, which is the minimum operating temperature of the implemented memory element. A low-voltage mode of operation of the sample is discovered, characterized by a wide range of permissible bias currents.
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All topics of experimental and theoretical physics including gravitation, field theory, elementary particles and nuclei, plasma, nonlinear phenomena, condensed matter, superconductivity, superfluidity, lasers, and surfaces.
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