N. K. Chumakov, A. A. Andreev, I. V. Belov, A. B. Davydov, I. S. Ezubchenko, L. L. Lev, L. A. Morgun, S. N. Nikolaev, I. A. Chernykh, S. Yu. Shabanov, V. N. Strocov, V. G. Valeyev
{"title":"Magnetoresistance and Symmetry of a Two-Dimensional Electron Gas in AlGaN/AlN/GaN Heterostructures","authors":"N. K. Chumakov, A. A. Andreev, I. V. Belov, A. B. Davydov, I. S. Ezubchenko, L. L. Lev, L. A. Morgun, S. N. Nikolaev, I. A. Chernykh, S. Yu. Shabanov, V. N. Strocov, V. G. Valeyev","doi":"10.1134/s0021364024600769","DOIUrl":null,"url":null,"abstract":"<p>The physical characteristics of a two-dimensional electron gas located in the GaN layer near the AlN/GaN interface of AlGaN/AlN/GaN heterostructures have been studied for decades. According to the currently accepted concepts, its symmetry coincides with that of the nonsymmorphic space group <i>C</i><span>\\(_{{6{v}}}^{4}\\)</span> in the bulk of GaN. However, this is incorrect. Indeed, the only nonsymmorphic element of this group—the rotation of the system about the [0001] axis normal to the interface plane, with a simultaneous shift along this axis by half a period of the GaN crystal lattice—is forbidden for a two-dimensional gas owing to the confinement potential, which, therefore, reduces its symmetry to the symmetry of the trigonal point group <i>C</i><span>\\(_{{3{v}}}\\)</span>. This fact has been confirmed in this work by ab initio density functional calculations and by electrophysical data.</p>","PeriodicalId":604,"journal":{"name":"JETP Letters","volume":null,"pages":null},"PeriodicalIF":1.4000,"publicationDate":"2024-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"JETP Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1134/s0021364024600769","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
The physical characteristics of a two-dimensional electron gas located in the GaN layer near the AlN/GaN interface of AlGaN/AlN/GaN heterostructures have been studied for decades. According to the currently accepted concepts, its symmetry coincides with that of the nonsymmorphic space group C\(_{{6{v}}}^{4}\) in the bulk of GaN. However, this is incorrect. Indeed, the only nonsymmorphic element of this group—the rotation of the system about the [0001] axis normal to the interface plane, with a simultaneous shift along this axis by half a period of the GaN crystal lattice—is forbidden for a two-dimensional gas owing to the confinement potential, which, therefore, reduces its symmetry to the symmetry of the trigonal point group C\(_{{3{v}}}\). This fact has been confirmed in this work by ab initio density functional calculations and by electrophysical data.
期刊介绍:
All topics of experimental and theoretical physics including gravitation, field theory, elementary particles and nuclei, plasma, nonlinear phenomena, condensed matter, superconductivity, superfluidity, lasers, and surfaces.