Hyper-parameter optimized GPR model based on chaos game algorithm for RF power transistors

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-06-03 DOI:10.1002/jnm.3259

Zhiwei Gao, Tao Zhou, Giovanni Crupi, Jialin Cai

引用次数: 0

Abstract

In this paper, a new frequency domain behavior model for radio frequency (RF) power transistors based on a hyper-parameter optimized Gaussian process regression (GPR) method is presented. The chaos game optimization (CGO) algorithm is used to optimize GPR hyperparameters, resulting in the CGO-GPR model. The basic theory as well as the details of the modeling process are presented. Validation of the model is conducted using a 10-watt GaN power transistor. Compared to the standard GPR model, the proposed model achieved a significant improvement. Furthermore, the comparison with the particle swarm optimization (PSO) based GPR model (PSO-GPR) showed that the proposed model allows achieving superior performance, thereby confirming the effectiveness of the developed modeling technique.

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基于混沌博弈算法的射频功率晶体管超参数优化 GPR 模型

本文介绍了一种基于超参数优化高斯过程回归（GPR）方法的新型射频（RF）功率晶体管频域行为模型。本文采用混沌博弈优化（CGO）算法来优化 GPR 超参数，从而建立了 CGO-GPR 模型。本文介绍了建模过程的基本理论和细节。使用 10 瓦 GaN 功率晶体管对模型进行了验证。与标准 GPR 模型相比，所提出的模型取得了显著的改进。此外，与基于粒子群优化（PSO）的 GPR 模型（PSO-GPR）的比较表明，所提出的模型可以实现更优越的性能，从而证实了所开发建模技术的有效性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

International Journal of Numerical Modelling-Electronic Networks Devices and Fields 工程技术-工程：电子与电气

CiteScore

4.60

自引率

6.20%

发文量

101

审稿时长

>12 weeks

期刊介绍： Prediction through modelling forms the basis of engineering design. The computational power at the fingertips of the professional engineer is increasing enormously and techniques for computer simulation are changing rapidly. Engineers need models which relate to their design area and which are adaptable to new design concepts. They also need efficient and friendly ways of presenting, viewing and transmitting the data associated with their models. The International Journal of Numerical Modelling: Electronic Networks, Devices and Fields provides a communication vehicle for numerical modelling methods and data preparation methods associated with electrical and electronic circuits and fields. It concentrates on numerical modelling rather than abstract numerical mathematics. Contributions on numerical modelling will cover the entire subject of electrical and electronic engineering. They will range from electrical distribution networks to integrated circuits on VLSI design, and from static electric and magnetic fields through microwaves to optical design. They will also include the use of electrical networks as a modelling medium.