Effect of bias magnetic field on transducer efficiency in electromagnetic ultrasonic non-destructive testing of Rock bolt

IF 4.1 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Sensors and Actuators A-physical Pub Date : 2024-06-03 DOI:10.1016/j.sna.2024.115532

Xianglong Dong , Ziji Ma , Zhiwen Jiang , Qi Wang , Feilong Wang

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引用次数: 0

Abstract

Non-destructive testing (NDT) of rock bolt anchoring quality is an important part of engineering quality and safety control, electromagnetic ultrasonic NDT is one of the promising detection methods, and improving the efficiency of ultrasonic transducer by optimizing the bias magnetic field is an important factor to obtain effective information. In this paper, several factors affecting the bias magnetic field are studied, and the work is divided into simulation and demonstration: COMSOL was used to simulate the electromagnetic ultrasonic transducer(EMAT) in order to analyze the influence of the number of magnetic circuit, the thickness of magnet and the thickness of yoke iron on the bias magnetic field. Then, an experimental platform was built, the magnetic circuit structure of the transducer was set with reference to the simulation results, and several important parameters of the bias magnetic field were determined by analyzing the collected signals. The results show that with the increase of the bias magnetic field magnetic circuit structure from independent to ring form, the magnetic field strength of the rock bolt increases, the magnetic field uniformity becomes better, and the efficiency of the transducer is also improved accordingly. In addition, under the same magnetic circuit condition, increasing the thickness of permanent magnet and yoke iron does not increase the magnetic flux density of the rock bolt axis proportionally, and has a limited effect on the efficiency of the transducer. In practical application, the corresponding structure is selected according to the needs, and the better bias magnetic field structure is selected while meeting the efficiency of the transducer.

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偏置磁场对岩石螺栓电磁超声无损检测中换能器效率的影响

岩石螺栓锚固质量无损检测（NDT）是工程质量和安全控制的重要组成部分，电磁超声无损检测是有前途的检测方法之一，而通过优化偏置磁场提高超声换能器的效率是获得有效信息的重要因素。本文对影响偏置磁场的几个因素进行了研究，工作分为模拟和论证两部分：使用 COMSOL 对电磁超声换能器（EMAT）进行仿真，分析磁路数量、磁体厚度和轭铁厚度对偏置磁场的影响。然后，搭建了实验平台，参照仿真结果设置了换能器的磁路结构，并通过分析采集到的信号确定了偏置磁场的几个重要参数。结果表明，随着偏置磁场磁路结构从独立式增加到环形，岩栓的磁场强度增大，磁场均匀度变好，换能器的效率也相应提高。此外，在相同的磁路条件下，增加永磁体和轭铁的厚度并不能成比例地增加岩螺栓轴的磁通密度，对换能器效率的影响有限。在实际应用中，要根据需要选择相应的结构，在满足换能器效率的前提下，选择较好的偏置磁场结构。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Sensors and Actuators A-physical 工程技术-工程：电子与电气

CiteScore

8.10

自引率

6.50%

发文量

630

审稿时长

49 days

期刊介绍： Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...