Synthesis and characterization of Cr-doped cadmium oxide thin films for NH3 gas-sensing applications

IF 1.9 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY
Shaimaa M Jassim, Adnan A Mohammed, Mahmood M Kareem, Ziad T Khodair
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Abstract

This research focuses on the fabrication of transparent conducting films of cadmium oxide (CdO) and cadmium oxide doped with chromium, utilizing a straightforward chemical spray pyrolysis technique. The investigation delves into the characteristics of these films by employing various methods, including X-ray diffraction, scanning electron microscopy, UV–visible transmittance analysis, Hall measurements and gas-sensing experiments. The study comprehensively examines the structural, morphological, optical, electrical and sensing properties in connection with different levels of chromium doping. The findings reveal that both the pristine and chromium-doped CdO films exhibit a polycrystalline cubic structure, as indicated by the X-ray diffraction analysis. Alterations in the surface microstructure, caused by varying chromium (Cr) doping concentrations, are evident in SEM images, displaying the presence of semi-spherical nanoparticles. The optical transmittance of the films exhibits a non-linear trend, decreasing initially and then increasing as the Cr concentration rises, reaching its peak at a 2.60 eV bandgap for films doped with 7 wt% Cr. Hall measurements confirm that all films exhibit n-type semiconductor behaviour. The CdO film doped with 7 wt% Cr exhibits a minimum resistivity of 0.427 × 10−2 Ω.cm and a carrier concentration of 2 × 1018 cm−3. Gas-sensing experiments conducted with ammonia indicate a maximum response of 26% at an operating temperature of 300°C for the 7 wt% Cr-doped CdO sample, which also displays faster response and recovery times.

Abstract Image

用于 NH3 气体传感的掺杂铬的氧化镉薄膜的合成与表征
这项研究的重点是利用直接化学喷雾热解技术,制造氧化镉(CdO)和掺杂铬的氧化镉透明导电薄膜。研究采用多种方法,包括 X 射线衍射、扫描电子显微镜、紫外-可见光透射分析、霍尔测量和气体感应实验,深入探讨了这些薄膜的特性。研究全面考察了与不同掺铬水平相关的结构、形态、光学、电学和传感特性。研究结果表明,X 射线衍射分析表明,原始和掺铬氧化镉薄膜均呈现多晶立方结构。在扫描电镜图像中,不同的铬(Cr)掺杂浓度导致的表面微观结构变化非常明显,显示出半球形纳米颗粒的存在。薄膜的光学透射率呈现非线性趋势,随着铬浓度的增加,光学透射率先降低后升高,掺杂 7 wt% 铬的薄膜在 2.60 eV 带隙处达到峰值。霍尔测量结果证实,所有薄膜都表现出 n 型半导体特性。掺杂了 7 wt% Cr 的氧化镉薄膜的最小电阻率为 0.427 × 10-2 Ω.cm,载流子浓度为 2 × 1018 cm-3。用氨气进行的气体感应实验表明,在工作温度为 300°C 时,掺杂 7 wt% 铬的氧化镉样品的最大响应为 26%,而且响应和恢复时间更快。
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来源期刊
Bulletin of Materials Science
Bulletin of Materials Science 工程技术-材料科学:综合
CiteScore
3.40
自引率
5.60%
发文量
209
审稿时长
11.5 months
期刊介绍: The Bulletin of Materials Science is a bi-monthly journal being published by the Indian Academy of Sciences in collaboration with the Materials Research Society of India and the Indian National Science Academy. The journal publishes original research articles, review articles and rapid communications in all areas of materials science. The journal also publishes from time to time important Conference Symposia/ Proceedings which are of interest to materials scientists. It has an International Advisory Editorial Board and an Editorial Committee. The Bulletin accords high importance to the quality of articles published and to keep at a minimum the processing time of papers submitted for publication.
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