Electronic and magnetic properties of Mn-doped and Mn-X (F, Cl, Br, I) co-doped modulated monolayer SnSe2

Abstract

The density functional theory is employed for learning the modulation of the electronic structure and magnetic properties of monolayer SnSe₂ by an Mn atom and by co-doping an Mn atom with a halogen atom. It is found that intrinsic SnSe₂ is nonmagnetic, which is consistent with the properties of semiconductors. Following Mn atom doping, the doped system is magnetic and the magnetic moments are primarily responsible for the Mn atom. After co-doping the Mn atom with halogen atoms, the doped system's total magnetic moments are decreased. The examination of the electronic structure demonstrates that the doping of the Mn atom and the co-doping of the Mn atom with halogen atoms lead to the introduction of impurity energy levels into the doped system, which appear only in the spin-up part and do not cross the Fermi energy level. There is asymmetry between the spin-up and spin-down energy bands and the doped system exhibits magnetic semiconductor properties. The hybridization of the p-orbitals of the halogen atoms and the 3d orbitals of the Mn atom is primarily responsible for the introduction of impurity energy levels in the energy bands of the doped system. In the Mn-doped system, ionic bonds were shaped between Mn and Se. In the co-doped system, strong ionic bonds were shaped between the Mn atom and F, Cl atoms, and covalent bonds were shaped between the Mn atom and Br, I atoms.