Implementation of a Boolean function with a double-gate vertical TFET (DGVTFET) using numerical simulations

IF 2.2 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Computational Electronics Pub Date : 2024-05-23 DOI:10.1007/s10825-024-02170-9

Ribu Mathew, Ankur Beohar, Jyotirmoy Ghosh, Pallabi Sarkar, Abhishek Kumar Upadhyay

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Abstract

Tunnel field-effect transistors (TFETs) have been explored extensively as a possible substitute for MOSFETs, especially for digital system design applications. Unlike conventional MOSFET devices, TFETs exhibit certain unique characteristics which are suitable for energy-efficient digital system design. In this paper, we report the use of a single device with both terminals biased independently for basic two-input Boolean logic operations AND, OR, NAND, and NOR using technology computer-aided design (TCAD) simulations. It is shown that these basic Boolean operations can be realized by minimally altering the design of a double-gate vertical TFET (DGVTFET) device and by selecting the appropriate device characteristics. The results show that when the Boolean functions are implemented, the I_ON/I_OFF ratio is in the range of 10⁹ to 10¹³ at a supply voltage V_DD = 1 V. Simulation results show that the use of a gate–source overlap technique and the selection of a suitable silicon body thickness are vital to obtaining distinct logic functions using a DGVTFET.

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通过数值模拟利用双栅垂直 TFET (DGVTFET) 实现布尔函数

隧道场效应晶体管（TFET）作为 MOSFET 的可能替代品，特别是在数字系统设计应用中，已经得到了广泛的探讨。与传统的 MOSFET 器件不同，TFET 具有某些独特的特性，适用于高能效数字系统设计。在本文中，我们利用技术计算机辅助设计（TCAD）仿真，报告了在基本的双输入布尔逻辑运算 AND、OR、NAND 和 NOR 中使用两个端子独立偏置的单个器件的情况。结果表明，只需对双栅极垂直 TFET（DGVTFET）器件的设计进行最小改动，并选择适当的器件特性，就能实现这些基本布尔运算。仿真结果表明，使用栅源重叠技术和选择合适的硅体厚度对利用 DGVTFET 获得独特的逻辑功能至关重要。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED

CiteScore

4.50

自引率

4.80%

发文量

142

审稿时长

>12 weeks

期刊介绍： he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.