Heat transfer study of 3D packaging structure with superconducting TSV for practical-scale quantum annealing machines

Wei Feng, Katsuya Kikuchi
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Abstract

To avoid the interconnect crowding in a planar structure, three-dimensional (3D) integrated technologies are necessary for realizing practical large-scale quantum annealing (QA) machines. We studied the heat transfer of a 3D packaging structure with superconducting through-silicon via for large-scale QA machines by finite element method simulation. The heat transfer becomes less efficient in the stacked structure. A high temperature of 57.0 mK is observed for the qubit chip, which degrades the quantum coherence of the qubit chip. We propose a heat transfer optimization method by increasing the number of bumps under the active interposer. Furthermore, by shortening the distance to the heat sink, the maximum temperature of the qubit chip is reduced to 18.1 mK. Our proposed heat transfer optimization methods are useful to provide a cryogenic temperature for stable qubit chip operation in a 3D packaging structure to realize practical-scale superconducting QA machines.
用于实用级量子退火机的带有超导 TSV 的三维封装结构的传热研究
为了避免平面结构中的互连拥挤,必须采用三维(3D)集成技术来实现实用的大规模量子退火(QA)机器。我们通过有限元法模拟研究了用于大规模量子退火设备的带有超导硅通孔的三维封装结构的传热问题。在堆叠结构中,传热效率较低。量子比特芯片的温度高达 57.0 mK,从而降低了量子比特芯片的量子相干性。我们提出了一种热传导优化方法,即增加有源内插件下的凸块数量。此外,通过缩短与散热器的距离,量子比特芯片的最高温度降低到 18.1 mK。我们提出的传热优化方法有助于在三维封装结构中为量子比特芯片的稳定运行提供低温,从而实现实用规模的超导 QA 机器。
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