Impact of crystallinity on thermal conductivity of RF magnetron sputtered MoS2 thin films

Tatsuya Kitazawa, Yuta Inaba, Shunsuke Yamashita, Shinya Imai, Keita Kurohara, Tetsuya Tatsumi, Hitoshi Wakabayashi, Shigetaka Tomiya
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Abstract

This study investigates the effects of sulfur atomic defects and crystallinity on the thermal conductivity of MoS2 thin films. Utilizing scanning transmission electron microscopy (STEM), X-ray diffraction (XRD), and Raman spectroscopy, we examined MoS2 films, several nanometers thick, deposited on Si/SiO2 substrates. These films were prepared via a combination of RF magnetron sputtering and sulfur vapor annealing (SVA) treatment. Structural analyses, including cross-sectional STEM and in-plane and out-of-plane XRD measurements, revealed an increase in the S/Mo ratio and grain size of the MoS2 films following SVA treatment. Notably, the in-plane thermal conductivity of MoS2 films treated with SVA was found to be at least an order of magnitude higher than that of films without SVA treatment. This research suggests that the in-plane thermal conductivity of MoS2 thin films can be significantly enhanced through crystallinity improvement via SVA treatment.
结晶度对射频磁控溅射 MoS2 薄膜热导率的影响
本研究探讨了硫原子缺陷和结晶度对 MoS2 薄膜热导率的影响。利用扫描透射电子显微镜 (STEM)、X 射线衍射 (XRD) 和拉曼光谱,我们研究了沉积在硅/二氧化硅基底上的几纳米厚的 MoS2 薄膜。这些薄膜是通过射频磁控溅射和硫蒸气退火(SVA)处理相结合的方法制备的。结构分析(包括横截面 STEM 以及面内和面外 XRD 测量)显示,经过 SVA 处理后,MoS2 薄膜的 S/Mo 比率和晶粒大小都有所增加。值得注意的是,经 SVA 处理的 MoS2 薄膜的面内热导率比未经 SVA 处理的薄膜高出至少一个数量级。这项研究表明,MoS2 薄膜的面内热导率可以通过 SVA 处理改善结晶度而显著提高。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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