{"title":"Modified El-Hoshy−Gibbons model for electronic stopping cross sections in Si and SiC for low-velocity ions with atomic numbers between 5 and 15","authors":"Kazuhiro Mochizuki, Tomoaki Nishimura, T. Mishima","doi":"10.35848/1347-4065/ad46ac","DOIUrl":null,"url":null,"abstract":"\n The El-Hoshy−Gibbons model, which reduces not only the atomic numbers of projectiles (Z1) and targets but also the impact parameter for small-angle collisions (R0) in the Firsov model, was modified based on the relation between R0 and the Kohn−Sham radii of projectiles (rKS); namely, the reduction factor y of R0 was chosen to be 10 when R0 was larger rKS and 5 in the case R0 ≤ rKS. This modification improved the reproducibility of the periodic dependences of the electronic stopping cross sections in Si, as well as those in SiC, for low-velocity ions with 5 ≤ Z1 ≤ 15.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"64 S1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Japanese Journal of Applied Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.35848/1347-4065/ad46ac","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The El-Hoshy−Gibbons model, which reduces not only the atomic numbers of projectiles (Z1) and targets but also the impact parameter for small-angle collisions (R0) in the Firsov model, was modified based on the relation between R0 and the Kohn−Sham radii of projectiles (rKS); namely, the reduction factor y of R0 was chosen to be 10 when R0 was larger rKS and 5 in the case R0 ≤ rKS. This modification improved the reproducibility of the periodic dependences of the electronic stopping cross sections in Si, as well as those in SiC, for low-velocity ions with 5 ≤ Z1 ≤ 15.