Superjunction IGBT with split carrier storage layer

IF 16.4 1区化学 Q1 CHEMISTRY, MULTIDISCIPLINARY

Accounts of Chemical Research Pub Date : 2024-05-03 DOI:10.1088/1361-6641/ad4739

Tae Young Yoon, Dongho Shin, Hyunwoo Kim, J. Kim

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引用次数: 0

Abstract

The Insulated Gate Bipolar Transistor (IGBT) is crucial in high-voltage applications due to its characteristics like breakdown voltage (BV) and on-state voltage VCE(sat). However, its slower turn-off time, attributed to hole mobility, restricts its frequency range. Techniques such as the carrier storage layer (CSL) and super-junction (SJ) structures aim to optimize BV and VCE(sat) through hole density and field distribution. Combining CSL and SJ offers advantages, yet challenges remain regarding E-field concentration. In this work, the split CSL concept introduces a solution by optimizing BV and Eoff through effective field distribution and hole extraction acceleration respectively while maintaining VCE(sat). Split CSL, which is divided into a high doping layer and a low doping layer, reduces the burden on the gate oxide by distributing the E-field evenly when in the off-state due to the difference in doping concentration. And during turn-off, hole current is concentrated on LDL, which has relatively low resistance, thereby accelerating hole extraction. Simulation-based results showcase improvements in the proposed structure's properties. The further optimization of high doping layer (HDL) and low doping layer (LDL) concentrations enhances the structure's performance. It is clear that the split CSL structure presents potential for advancing IGBT capabilities. The application of the split CSL structure resulted in significant improvements: the turn-off time was reduced by 32.4% and the breakdown voltage increased by 32.5 V compared to conventional CSL-SJ structures. These enhancements highlight the effectiveness of the split CSL design in optimizing the IGBT’s performance attribute.

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带分裂载流子存储层的超结 IGBT

绝缘栅双极晶体管（IGBT）具有击穿电压（BV）和导通电压 VCE（饱和）等特性，在高压应用中至关重要。然而，由于空穴迁移率的原因，其关断时间较慢，限制了其频率范围。载流子存储层（CSL）和超级结（SJ）结构等技术旨在通过空穴密度和场分布优化击穿电压和 VCE（饱和）。CSL 和 SJ 的结合具有优势，但在电场集中方面仍存在挑战。在这项工作中，分离式 CSL 概念引入了一种解决方案，即在保持 VCE(sat) 的同时，分别通过有效的场分布和空穴提取加速度来优化 BV 和 Eoff。分裂式 CSL 分为高掺杂层和低掺杂层，由于掺杂浓度的不同，在关断状态时可均匀分布电场，从而减轻栅极氧化物的负担。而在关断期间，空穴电流集中在电阻相对较低的 LDL 上，从而加速了空穴萃取。基于仿真的结果表明，拟议结构的性能得到了改善。高掺杂层（HDL）和低掺杂层（LDL）浓度的进一步优化提高了结构的性能。显然，分体式 CSL 结构具有提高 IGBT 性能的潜力。与传统的 CSL-SJ 结构相比，分体式 CSL 结构的应用带来了显著的改进：关断时间缩短了 32.4%，击穿电压提高了 32.5 V。这些改进凸显了分体式 CSL 设计在优化 IGBT 性能属性方面的有效性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Accounts of Chemical Research 化学-化学综合

CiteScore

31.40

自引率

1.10%

发文量

312

审稿时长

2 months

期刊介绍： Accounts of Chemical Research presents short, concise and critical articles offering easy-to-read overviews of basic research and applications in all areas of chemistry and biochemistry. These short reviews focus on research from the author’s own laboratory and are designed to teach the reader about a research project. In addition, Accounts of Chemical Research publishes commentaries that give an informed opinion on a current research problem. Special Issues online are devoted to a single topic of unusual activity and significance. Accounts of Chemical Research replaces the traditional article abstract with an article "Conspectus." These entries synopsize the research affording the reader a closer look at the content and significance of an article. Through this provision of a more detailed description of the article contents, the Conspectus enhances the article's discoverability by search engines and the exposure for the research.