Thin-film memristor using an amorphous metal-oxide semiconductor with a gradient composition of conducting components

Kenta Yachida, T. Matsuda, Hidenori Kawanishi, Mutsumi Kimura
{"title":"Thin-film memristor using an amorphous metal-oxide semiconductor with a gradient composition of conducting components","authors":"Kenta Yachida, T. Matsuda, Hidenori Kawanishi, Mutsumi Kimura","doi":"10.35848/1347-4065/ad49f3","DOIUrl":null,"url":null,"abstract":"\n A thin-film memristor using an amorphous metal-oxide semiconductor (AOS) with a gradient composition of conducting components has been developed, which is another way to achieve memristive properties. The advantages are that conductivity distribution is already obtained as fabricated without forming operation, and an analog characteristic is obtained by optimizing the component composition in AOS. As the binary characteristic, the set operation induces the transition from a low conductance state (LCS) to a high conductance state (HCS), whereas the reset operation does vice-versa. The switching ratio (SR) is high, 448. As the analog characteristic, the SR becomes greater rapidly as the Vset increases, namely, the dynamic range is outstanding.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":" 59","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Japanese Journal of Applied Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.35848/1347-4065/ad49f3","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

A thin-film memristor using an amorphous metal-oxide semiconductor (AOS) with a gradient composition of conducting components has been developed, which is another way to achieve memristive properties. The advantages are that conductivity distribution is already obtained as fabricated without forming operation, and an analog characteristic is obtained by optimizing the component composition in AOS. As the binary characteristic, the set operation induces the transition from a low conductance state (LCS) to a high conductance state (HCS), whereas the reset operation does vice-versa. The switching ratio (SR) is high, 448. As the analog characteristic, the SR becomes greater rapidly as the Vset increases, namely, the dynamic range is outstanding.
使用具有梯度导电成分的非晶态金属氧化物半导体的薄膜忆阻器
使用具有梯度导电成分的非晶金属氧化物半导体(AOS)开发出了一种薄膜忆阻器,这是实现忆阻器特性的另一种方法。其优点是在制造过程中无需成型操作即可获得导电率分布,并通过优化 AOS 中的成分组成获得模拟特性。作为二进制特性,设定操作会导致从低电导状态(LCS)过渡到高电导状态(HCS),而复位操作则相反。开关比(SR)很高,为 448。与模拟特性一样,随着 Vset 的增大,SR 会迅速变大,即动态范围非常突出。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信