Effects of spacer layer thickness in InAlN/GaN double-channel HEMTs

IF 16.4 1区 化学 Q1 CHEMISTRY, MULTIDISCIPLINARY
Siyin Guo, Q. Zhu, Yilin Chen, Meng Zhang, Minhan Mi, Jiejie Zhu, Yi-Min Lei, Sirui An, Jia-Ni Lu, Can Gong, Xiaohua Ma
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引用次数: 0

Abstract

In this paper, the impact of upper channel layer thickness on the electrical characteristics and hysteresis behavior of double-channel InAlN/GaN HEMTs were investigated. The devices with an upper channel layer thickness of 20 nm exhibit higher output current and lower Ron compared to devices with a thickness of 10/6 nm. This is attributed to the higher sheet carrier density and the reduced scattering. However, a 20 nm thickness of the upper channel layer in HEMT exhibits hysteresis phenomena in its electrical characteristics. For this hysteresis phenomenon, capacitance measurements and TEM characterization indicate that it is caused by dislocations in the lower barrier layer under the gate. A thicker upper channel layer is beneficial to increasing the output current of the device but leads to degradation of the lower InAlN barrier layer, resulting in hysteresis. This study provides an optimized solution for the growth and device fabrication of double-channel InAlN materials.
InAlN/GaN 双通道 HEMT 中间隔层厚度的影响
本文研究了上沟道层厚度对双通道 InAlN/GaN HEMT 器件电气特性和滞后行为的影响。与厚度为 10/6 nm 的器件相比,上沟道层厚度为 20 nm 的器件具有更高的输出电流和更低的罗恩。这归因于较高的片载流子密度和较低的散射。然而,HEMT 上沟道层厚度为 20 nm 时,其电气特性会出现滞后现象。电容测量和 TEM 表征表明,这种滞后现象是由栅极下阻挡层中的位错造成的。较厚的上沟道层有利于增加器件的输出电流,但会导致较低的 InAlN 势垒层退化,从而产生滞后现象。这项研究为双通道 InAlN 材料的生长和器件制造提供了优化解决方案。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Accounts of Chemical Research
Accounts of Chemical Research 化学-化学综合
CiteScore
31.40
自引率
1.10%
发文量
312
审稿时长
2 months
期刊介绍: Accounts of Chemical Research presents short, concise and critical articles offering easy-to-read overviews of basic research and applications in all areas of chemistry and biochemistry. These short reviews focus on research from the author’s own laboratory and are designed to teach the reader about a research project. In addition, Accounts of Chemical Research publishes commentaries that give an informed opinion on a current research problem. Special Issues online are devoted to a single topic of unusual activity and significance. Accounts of Chemical Research replaces the traditional article abstract with an article "Conspectus." These entries synopsize the research affording the reader a closer look at the content and significance of an article. Through this provision of a more detailed description of the article contents, the Conspectus enhances the article's discoverability by search engines and the exposure for the research.
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