Glass transition and crystallization of Se95Te5 chalcogenide glassy semiconductor

IF 1.2 4区 材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY
S. U. Atayeva, A. Isayev, S. Mekhtiyeva, S. Garibova, R. Alekberov, F. N. Mammadov
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引用次数: 0

Abstract

The study is dedicated to the investigation of thermo-physical characteristics of Se95Te5 chalcogenide glassy semiconductor during its glass formation and crystallization processes, employing various scanning rates of 5, 10, 15 and 20 K/min in non-isothermal modes through DSC measurement. Analysis of the structural relaxation kinetics involves the Kissinger’s, Augis and Bennett's, as well as Matusita’s approaches. Experimental data yield contains the determination of crucial parameters such as glass transition (𝑇𝑇𝑔𝑔), crystallization(𝑇𝑇𝑐𝑐), and melting temperatures alongside factors like reduced temperature of glass transition (𝑇𝑇𝑟𝑟𝑟𝑟), Hruby’s parameter (𝐾𝐾𝑔𝑔𝑔𝑔), fragility index (𝐹𝐹𝑖𝑖), Avrami exponents (n, m), glass transition (140.24 kJ/mol) and crystallization (Ec = 95.11 kJ/mol) energies, respectively. The results confirm that Se95Te5 chalcogenide system as an efficient glass former. Matusita’s method reveals that the crystallization mechanism (n = 2.51, m = 1.9) corresponds to volumetric nucleation with two-dimensional growth.
Se95Te5 卤化物玻璃半导体的玻璃转变和结晶
本研究致力于通过 DSC 测量,在非等温模式下采用 5、10、15 和 20 K/min 的不同扫描速率,研究 Se95Te5 卤化物玻璃半导体在玻璃形成和结晶过程中的热物理特性。结构弛豫动力学分析包括基辛格、奥吉斯和贝内特以及马图西塔方法。实验数据包括玻璃化转变(𝑇𝑇𝑔𝑔)、结晶(𝑇𝑐𝑐)和熔化温度等关键参数的测定、和熔化温度,以及玻璃转化降低温度 (𝑇𝑇𝑟𝑟)、赫鲁比参数 (γ)、脆性指数 (𝐹𝑖𝑖𝐹𝐹𝑖𝑖) 、阿夫拉米指数 (n,m)、玻璃转化 (140.24 kJ/mol)和结晶能(Ec = 95.11 kJ/mol)。结果证实,Se95Te5 卤化物体系是一种高效的玻璃前驱体。Matusita 方法揭示了结晶机制(n = 2.51,m = 1.9)与二维生长的体积成核相对应。
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来源期刊
Chalcogenide Letters
Chalcogenide Letters MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED
CiteScore
1.80
自引率
20.00%
发文量
86
审稿时长
1 months
期刊介绍: Chalcogenide Letters (CHL) has the aim to publish rapidly papers in chalcogenide field of research and appears with twelve issues per year. The journal is open to letters, short communications and breakings news inserted as Short Notes, in the field of chalcogenide materials either amorphous or crystalline. Short papers in structure, properties and applications, as well as those covering special properties in nano-structured chalcogenides are admitted.
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