Stefan Svensson, William A. Beck, D. Donetski, G. Kipshidze, G. Belenky
{"title":"Design considerations for a long-wavelength InAsSb detector diode","authors":"Stefan Svensson, William A. Beck, D. Donetski, G. Kipshidze, G. Belenky","doi":"10.1088/1361-6641/ad4a6c","DOIUrl":null,"url":null,"abstract":"\n InAsSb can absorb light across the entire long wavelength range (8-12 μm) and shares many of the other relevant basic materials properties of HgCdTe, the current incumbent detector technology for this band. We discuss here the device architectures in relation to the crystal growth technical aspects using molecular beam epitaxy and propose a simplified design consisting of an InAsSb absorber with a graded wider bandgap top layer of lattice matched AlInAsSb that exhibits a spontaneously formed p-n-junction. The 77 K device performance is predicted with a numerical model that indicates that quantum efficiencies of at least 75% should be achievable.","PeriodicalId":1,"journal":{"name":"Accounts of Chemical Research","volume":null,"pages":null},"PeriodicalIF":16.4000,"publicationDate":"2024-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Accounts of Chemical Research","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1088/1361-6641/ad4a6c","RegionNum":1,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
InAsSb can absorb light across the entire long wavelength range (8-12 μm) and shares many of the other relevant basic materials properties of HgCdTe, the current incumbent detector technology for this band. We discuss here the device architectures in relation to the crystal growth technical aspects using molecular beam epitaxy and propose a simplified design consisting of an InAsSb absorber with a graded wider bandgap top layer of lattice matched AlInAsSb that exhibits a spontaneously formed p-n-junction. The 77 K device performance is predicted with a numerical model that indicates that quantum efficiencies of at least 75% should be achievable.
期刊介绍:
Accounts of Chemical Research presents short, concise and critical articles offering easy-to-read overviews of basic research and applications in all areas of chemistry and biochemistry. These short reviews focus on research from the author’s own laboratory and are designed to teach the reader about a research project. In addition, Accounts of Chemical Research publishes commentaries that give an informed opinion on a current research problem. Special Issues online are devoted to a single topic of unusual activity and significance.
Accounts of Chemical Research replaces the traditional article abstract with an article "Conspectus." These entries synopsize the research affording the reader a closer look at the content and significance of an article. Through this provision of a more detailed description of the article contents, the Conspectus enhances the article's discoverability by search engines and the exposure for the research.