{"title":"Oxide semiconductor based deep-subthreshold operated read-out electronics for all-printed smart sensor patches","authors":"Jyoti Ranjan Pradhan, Sushree Sangita Priyadarsini, Sanjana R. Nibgoor, Manvendra Singh, Subho Dasgupta","doi":"10.1002/EXP.20230167","DOIUrl":null,"url":null,"abstract":"<p>The ability to fabricate an entire smart sensor patch with read-out electronics using commercial printing techniques may have a wide range of potential applications. Although solution-processed oxide thin film transistors (TFTs) are capable of providing high mobility electron transport, resulting in large ON-state current and power output, there is hardly any literature report that uses the printed oxide TFTs at the sensor interfaces. Here, printed amorphous indium-gallium-zinc oxide (<i>a</i>-IGZO)-based deep-subthreshold operated TFTs that comprise signal amplifiers and analog-to-digital converters (ADCs) that can successfully digitalize the analog sensor signals up to a frequency range of 1 kHz are reported. In addition, exploiting the high current oxide TFTs, a current drive circuit placed after the ADC unit has been found useful in producing easy-to-detect visual recognition of the sensor signal at a predefined threshold crossover. Notably, the entire smart sensor patch is demonstrated to operate at a low supply voltage of ≤2 V, thereby ensuring that it can be an on-chip energy source compatible and standalone detection unit.</p>","PeriodicalId":72997,"journal":{"name":"Exploration (Beijing, China)","volume":"5 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/EXP.20230167","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Exploration (Beijing, China)","FirstCategoryId":"1085","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/EXP.20230167","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The ability to fabricate an entire smart sensor patch with read-out electronics using commercial printing techniques may have a wide range of potential applications. Although solution-processed oxide thin film transistors (TFTs) are capable of providing high mobility electron transport, resulting in large ON-state current and power output, there is hardly any literature report that uses the printed oxide TFTs at the sensor interfaces. Here, printed amorphous indium-gallium-zinc oxide (a-IGZO)-based deep-subthreshold operated TFTs that comprise signal amplifiers and analog-to-digital converters (ADCs) that can successfully digitalize the analog sensor signals up to a frequency range of 1 kHz are reported. In addition, exploiting the high current oxide TFTs, a current drive circuit placed after the ADC unit has been found useful in producing easy-to-detect visual recognition of the sensor signal at a predefined threshold crossover. Notably, the entire smart sensor patch is demonstrated to operate at a low supply voltage of ≤2 V, thereby ensuring that it can be an on-chip energy source compatible and standalone detection unit.