{"title":"Floating/grounded charged controlled memristor emulator using DVCCTA","authors":"Nidhee Bhuwal, Manoj Kumar Majumder, Deepika Gupta","doi":"10.1007/s10825-024-02176-3","DOIUrl":null,"url":null,"abstract":"<div><p>In this work, a charge-based memristor emulator is designed using a single active current mode component Differential Voltage Current Conveyor Transconductance Amplifier with one capacitor and two resistors as passive components. Importantly, the proposed circuit topology can be changed to either grounded or floating configuration using a single switch. Moreover, the proposed memristor design can be operated either in incremental or decremental configuration by using another switch. Therefore, using only two switches, the same circuitry can be utilized to design the floating/grounded incremental/decremental memristor. The pinched hysteresis loop area can be controlled by applying different biasing voltages. Further, the mathematical analysis is performed to drive the theoretical TiO<sub>2</sub> based results for the proposed memristor emulator. In addition, simulations confirming the theoretical analysis are conducted in PSPICE using the 180 nm TSMC technology with a supply voltage of ± 0.9 V by varying frequencies and capacitances to obtain a pinched hysteresis loop. The presented circuit performs effectively for frequencies upto 500 MHz while operating with grounded type memristor and 300 MHz with floating type design. To check the ability to remember the history of the proposed memristor, the non-volatility test is performed for both the incremental and decremental configurations. Moreover, the suggested memristor design is applied in an adaptive learning circuit to prove its feasibility in neuromorphic applications.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 4","pages":"899 - 909"},"PeriodicalIF":2.2000,"publicationDate":"2024-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Computational Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10825-024-02176-3","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
In this work, a charge-based memristor emulator is designed using a single active current mode component Differential Voltage Current Conveyor Transconductance Amplifier with one capacitor and two resistors as passive components. Importantly, the proposed circuit topology can be changed to either grounded or floating configuration using a single switch. Moreover, the proposed memristor design can be operated either in incremental or decremental configuration by using another switch. Therefore, using only two switches, the same circuitry can be utilized to design the floating/grounded incremental/decremental memristor. The pinched hysteresis loop area can be controlled by applying different biasing voltages. Further, the mathematical analysis is performed to drive the theoretical TiO2 based results for the proposed memristor emulator. In addition, simulations confirming the theoretical analysis are conducted in PSPICE using the 180 nm TSMC technology with a supply voltage of ± 0.9 V by varying frequencies and capacitances to obtain a pinched hysteresis loop. The presented circuit performs effectively for frequencies upto 500 MHz while operating with grounded type memristor and 300 MHz with floating type design. To check the ability to remember the history of the proposed memristor, the non-volatility test is performed for both the incremental and decremental configurations. Moreover, the suggested memristor design is applied in an adaptive learning circuit to prove its feasibility in neuromorphic applications.
期刊介绍:
he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered.
In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.