In segregation influence on properties of InAs quantum dots in dots-in-a-well

IF 1.5 4区物理与天体物理 Q3 PHYSICS, APPLIED

Japanese Journal of Applied Physics Pub Date : 2024-05-10 DOI:10.35848/1347-4065/ad3f5b

Koki Okuno, Naoki Okada, Kosuke Iwaide, Nobuhiko Ozaki

引用次数: 0

Abstract

We investigated the growth of InAs quantum dots (QDs) in a dots-in-a-well (DWELL) from the perspective of the influence of In segregation from the InGaAs layers in the DWELL. Reflection high-energy electron diffraction (RHEED) measurements during the growth of the lower InGaAs layer indicated that In segregation increased with the In composition of the InGaAs layer. The estimated In segregation values were consistent with the decreases in the critical thickness for the QDs growth and the total volume variations of the grown QDs. These results illustrate that the segregated In from the lower InGaAs layer contributes to the QD growth in the DWELL, and their density increases. Furthermore, RHEED measurements during the growth of the upper InGaAs layer indicated the suppression of the deformation of embedded QDs , which could partially contribute to the longer emission wavelength of the QDs in the DWELL.

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In 隔离对 "点中点 "中 InAs 量子点特性的影响

我们从 In 偏析对 DWELL 中 InGaAs 层影响的角度研究了 InAs 量子点（QDs）在点中点（DWELL）中的生长。在下层 InGaAs 层生长过程中进行的反射高能电子衍射 (RHEED) 测量表明，铟偏析随着 InGaAs 层中铟成分的增加而增加。估计的铟偏析值与生长 QDs 临界厚度的减小和生长 QDs 总体积的变化一致。这些结果表明，从下层 InGaAs 层分离出来的 In 促进了 DWELL 中 QD 的生长，并增加了它们的密度。此外，在上层 InGaAs 层生长过程中进行的 RHEED 测量表明，嵌入 QD 的变形受到抑制，这可能是 DWELL 中 QD 发射波长更长的部分原因。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Japanese Journal of Applied Physics 物理-物理：应用

CiteScore

3.00

自引率

26.70%

发文量

818

审稿时长

3.5 months

期刊介绍： The Japanese Journal of Applied Physics (JJAP) is an international journal for the advancement and dissemination of knowledge in all fields of applied physics. JJAP is a sister journal of the Applied Physics Express (APEX) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP). JJAP publishes articles that significantly contribute to the advancements in the applications of physical principles as well as in the understanding of physics in view of particular applications in mind. Subjects covered by JJAP include the following fields: • Semiconductors, dielectrics, and organic materials • Photonics, quantum electronics, optics, and spectroscopy • Spintronics, superconductivity, and strongly correlated materials • Device physics including quantum information processing • Physics-based circuits and systems • Nanoscale science and technology • Crystal growth, surfaces, interfaces, thin films, and bulk materials • Plasmas, applied atomic and molecular physics, and applied nuclear physics • Device processing, fabrication and measurement technologies, and instrumentation • Cross-disciplinary areas such as bioelectronics/photonics, biosensing, environmental/energy technologies, and MEMS