{"title":"Accumulation and Suppression of Radiation-Induced Charge in MOS Structures","authors":"D. V. Andreev","doi":"10.1134/s102745102402023x","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>It is shown that when a MOS (metal–oxide–semiconductor) structure is simultaneously exposed to radiation and the high-field injection of electrons, part of the radiation-induced positive charge can be suppressed when interacting with injected electrons, and the density of surface states can increase. These phenomena must be taken into account during the operation of MOS radiation sensors in high-field charge injection modes. High-field injection modes used for postradiation suppression of positive charge in MOS sensors are analyzed. It is established that to annihilate one hole (radiation-induced positive charge), it is necessary to inject (0.5–2) × 10<sup>4</sup> electrons into the gate dielectric; the magnitude of the electric field has almost no effect on the process of suppression of the radiation-induced charge.</p>","PeriodicalId":671,"journal":{"name":"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques","volume":null,"pages":null},"PeriodicalIF":0.5000,"publicationDate":"2024-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1134/s102745102402023x","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0
Abstract
It is shown that when a MOS (metal–oxide–semiconductor) structure is simultaneously exposed to radiation and the high-field injection of electrons, part of the radiation-induced positive charge can be suppressed when interacting with injected electrons, and the density of surface states can increase. These phenomena must be taken into account during the operation of MOS radiation sensors in high-field charge injection modes. High-field injection modes used for postradiation suppression of positive charge in MOS sensors are analyzed. It is established that to annihilate one hole (radiation-induced positive charge), it is necessary to inject (0.5–2) × 104 electrons into the gate dielectric; the magnitude of the electric field has almost no effect on the process of suppression of the radiation-induced charge.
期刊介绍：
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques publishes original articles on the topical problems of solid-state physics, materials science, experimental techniques, condensed media, nanostructures, surfaces of thin films, and phase boundaries: geometric and energetical structures of surfaces, the methods of computer simulations; physical and chemical properties and their changes upon radiation and other treatments; the methods of studies of films and surface layers of crystals (XRD, XPS, synchrotron radiation, neutron and electron diffraction, electron microscopic, scanning tunneling microscopic, atomic force microscopic studies, and other methods that provide data on the surfaces and thin films). Articles related to the methods and technics of structure studies are the focus of the journal. The journal accepts manuscripts of regular articles and reviews in English or Russian language from authors of all countries. All manuscripts are peer-reviewed.
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