V. V. Privezentsev, A. P. Sergeev, A. A. Firsov, V. S. Kulikauskas, V. V. Zatekin, E. P. Kirilenko, A. V. Goryachev, V. A. Kovalskiy
{"title":"Study of SiO2 Films Implanted with 64Zn+ Ions and Oxidized at Elevated Temperatures","authors":"V. V. Privezentsev, A. P. Sergeev, A. A. Firsov, V. S. Kulikauskas, V. V. Zatekin, E. P. Kirilenko, A. V. Goryachev, V. A. Kovalskiy","doi":"10.1134/s1027451024020368","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The results of studying SiO<sub>2</sub> films implanted with <sup>64</sup>Zn<sup>+</sup> ions with a dose of 5 × 10<sup>16</sup> cm<sup>–2</sup> at energies of 20 and 120 keV and isochronously oxidized for 1 h at temperatures from 400 to 800°C with a step of 100°C are presented. The profiles of Zn and its oxide are studied using Rutherford backscattering and time-of-flight secondary-ion mass spectrometry. The chemical state of zinc and the phase composition of the film are determined by Auger electron spectroscopy and Raman scattering. It is found that after implantation, the zinc distribution has two maxima at depths of 20 and 85 nm, and after annealing at 700°C there is a broadened maximum at a depth of 45 nm. After implantation, a mixture of Zn and ZnO phases is formed in the sample. After annealing at 700°C, only the ZnO phase is formed in the sample, the distribution profile of which has a broadened peak at 45 nm.</p>","PeriodicalId":671,"journal":{"name":"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques","volume":null,"pages":null},"PeriodicalIF":0.5000,"publicationDate":"2024-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1134/s1027451024020368","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
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Abstract
The results of studying SiO2 films implanted with 64Zn+ ions with a dose of 5 × 1016 cm–2 at energies of 20 and 120 keV and isochronously oxidized for 1 h at temperatures from 400 to 800°C with a step of 100°C are presented. The profiles of Zn and its oxide are studied using Rutherford backscattering and time-of-flight secondary-ion mass spectrometry. The chemical state of zinc and the phase composition of the film are determined by Auger electron spectroscopy and Raman scattering. It is found that after implantation, the zinc distribution has two maxima at depths of 20 and 85 nm, and after annealing at 700°C there is a broadened maximum at a depth of 45 nm. After implantation, a mixture of Zn and ZnO phases is formed in the sample. After annealing at 700°C, only the ZnO phase is formed in the sample, the distribution profile of which has a broadened peak at 45 nm.
期刊介绍：
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques publishes original articles on the topical problems of solid-state physics, materials science, experimental techniques, condensed media, nanostructures, surfaces of thin films, and phase boundaries: geometric and energetical structures of surfaces, the methods of computer simulations; physical and chemical properties and their changes upon radiation and other treatments; the methods of studies of films and surface layers of crystals (XRD, XPS, synchrotron radiation, neutron and electron diffraction, electron microscopic, scanning tunneling microscopic, atomic force microscopic studies, and other methods that provide data on the surfaces and thin films). Articles related to the methods and technics of structure studies are the focus of the journal. The journal accepts manuscripts of regular articles and reviews in English or Russian language from authors of all countries. All manuscripts are peer-reviewed.
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