V. V. Syshchenko, A. I. Tarnovsky, A. S. Parakhin, A. Yu. Isupov
{"title":"Simulating Quantum States of Positively Charged Particles Channeling along the [111] Direction in a Silicon Crystal","authors":"V. V. Syshchenko, A. I. Tarnovsky, A. S. Parakhin, A. Yu. Isupov","doi":"10.1134/s1027451024020186","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The potential well formed by the repulsive continuous potentials of three neighboring [111] chains in a silicon crystal, for a positively charged particle, exhibits the symmetry of an equilateral triangle, described by the <span>\\({{C}_{{3{v}}}}\\)</span> group. In this case, the previously developed procedure for finding the eigenvalues of the transverse motion energy of channeled positively charged particles (positrons or protons) and the corresponding eigenfunctions of the Hamiltonian, implemented on a square spatial grid, leads to artifacts in numerical modeling. We present a modification of the modeling algorithm based on a hexagonal grid, which takes into account the symmetry of the problem. The results of both approaches are compared, demonstrating the absence of artifacts when using a hexagonal grid. Using numerical methods, all discrete energy levels of the transverse motion of channeled positrons with a longitudinal motion energy of 2, 2.5, 3, 3.5, and 4 GeV in the discussed potential well are found. The developed procedure can be used in studies of manifestations of dynamic tunneling and quantum chaos in channeling.</p>","PeriodicalId":671,"journal":{"name":"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques","volume":null,"pages":null},"PeriodicalIF":0.5000,"publicationDate":"2024-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1134/s1027451024020186","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0
Abstract
The potential well formed by the repulsive continuous potentials of three neighboring [111] chains in a silicon crystal, for a positively charged particle, exhibits the symmetry of an equilateral triangle, described by the \({{C}_{{3{v}}}}\) group. In this case, the previously developed procedure for finding the eigenvalues of the transverse motion energy of channeled positively charged particles (positrons or protons) and the corresponding eigenfunctions of the Hamiltonian, implemented on a square spatial grid, leads to artifacts in numerical modeling. We present a modification of the modeling algorithm based on a hexagonal grid, which takes into account the symmetry of the problem. The results of both approaches are compared, demonstrating the absence of artifacts when using a hexagonal grid. Using numerical methods, all discrete energy levels of the transverse motion of channeled positrons with a longitudinal motion energy of 2, 2.5, 3, 3.5, and 4 GeV in the discussed potential well are found. The developed procedure can be used in studies of manifestations of dynamic tunneling and quantum chaos in channeling.
期刊介绍:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques publishes original articles on the topical problems of solid-state physics, materials science, experimental techniques, condensed media, nanostructures, surfaces of thin films, and phase boundaries: geometric and energetical structures of surfaces, the methods of computer simulations; physical and chemical properties and their changes upon radiation and other treatments; the methods of studies of films and surface layers of crystals (XRD, XPS, synchrotron radiation, neutron and electron diffraction, electron microscopic, scanning tunneling microscopic, atomic force microscopic studies, and other methods that provide data on the surfaces and thin films). Articles related to the methods and technics of structure studies are the focus of the journal. The journal accepts manuscripts of regular articles and reviews in English or Russian language from authors of all countries. All manuscripts are peer-reviewed.